C1815

Audio Frequency Amplifier & High Frequency OSC

•Complement to KSA1015

•Collector-Base Voltage : VCBO= 50V

1

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

SymbolVCBOVCEOVEBOICIBPCTJTSTG

Collector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector CurrentBase Current

Collector Power DissipationJunction TemperatureStorage Temperature

Parameter

Value6050515050400125-55 ~ 150

UnitsVVVmAmAmW°C°C

Electrical Characteristics Ta=25°C unless otherwise noted

SymbolICBOIEBOhFE1hFE2VCE (sat)VBE (sat)fTCobNF

Parameter

Collector Cut-off CurrentEmitter Cut-off CurrentDC Current Gain

Collector-Emitter Saturation VoltageBase-Emitter Saturation VoltageCurrent Gain Bandwidth ProductOutput CapacitanceNoise Figure

Test ConditionVCB=60V, IE=0VEB=5V, IC=0VCE=6V, IC=2mA VCE=6V, IC=150mA IC=100mA, IB=10mAIC=100mA, IB=10mAVCE=10V, IC=1mAVCB=10V, IE=0, f=1MHzVCE=6V, IC=0.1mARS=10kΩ, f=1Hz

80

2.01.0

3.01.0

7025

0.1

Min.

Typ.

Max.0.10.17000.251.0

VVMHzpFdBUnitsµAµA

hFE Classification

Classification OhFE1

70 ~ 140

Y120 ~ 240

GR200 ~ 400

L350 ~ 700

©2002 Fairchild Semiconductor CorporationRev. A2, September 2002

KSC1815Typical Characteristics 100100 VCE=6VIB = 400µAIC[mA], COLLECTOR CURRENT80IB = 300µA60IC[mA], COLLECTOR CURRENTIB = 350µAIB = 250µAIB = 200µA1040IB = 150µAIB = 100µA 120IB = 50µA00481216200.10.00.20.40.60.81.01.2VCE[V], COLLECTOR-EMITTER VOLTAGEVBE[V], BASE-EMITTER VOLTAGEFigure 1. Static CharacteristicFigure 2. Transfer Characteristic VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE10000VCE = 6VIC=10IBhFE, DC CURRENT GAINVBE(sat)10001000 100VCE(sat)101101001000101101001000IC[mA], COLLECTOR CURRENTIC[mA], COLLECTOR CURRENTFigure 3. DC current GainFigure 4. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage 1001000 f=1MHzIE=0VCE=6VfT[MHz],CURRENT GAIN-BANDWIDTH PRODUCTCob[pF], CAPACITANCE10100 101110100100010.1110100VCB[V], COLLECTOR-BASE VOLTAGEIC[mA], COLLECTOR CURRENTFigure 5. Output CapacitanceFigure 6. Current Gain Bandwidth Product©2002 Fairchild Semiconductor CorporationRev. A2, September 2002

KSC1815Package DimensionsTO-924.58–0.15+0.250.46 ±0.1014.47 ±0.404.58 ±0.201.27TYP[1.27 ±0.20]3.60 ±0.201.27TYP[1.27 ±0.20]0.38–0.05+0.103.86MAX1.02 ±0.100.38–0.05+0.10(R2.29)(0.25)Dimensions in Millimeters©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

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PRODUCT STATUS DEFINITIONSDefinition of Terms

Datasheet IdentificationAdvance Information

Product StatusFormative or In DesignFirst Production

Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Preliminary

No Identification NeededFull Production

ObsoleteNot In Production

©2002 Fairchild Semiconductor CorporationRev. I1