FABRICATION METHODS FACILITATING INTEGRATION OF DI

专利名称：FABRICATION METHODS FACILITATING

INTEGRATION OF DIFFERENT DEVICEARCHITECTURES

发明人：Hong YU,Seong Yeol MUN,Bingwu LIU,Lun

ZHAO,Richard J. CARTER,Manfred ELLER

申请号：US14084756申请日：20131120

公开号：US20150140756A1公开日：20150521

专利附图：

摘要：Circuit fabrication methods are provided which include, for example: providing

one or more gate structures disposed over a substrate structure, the substrate structureincluding a first region and a second region; forming a plurality of U-shaped cavitiesextending into the substrate structure in the first region and the second region thereof,where at least one first cavity of the plurality of U-shaped cavities is disposed adjacent inone gate structure in the first region; and expanding the at least one first cavity furtherinto the substrate structure to at least partially undercut the one gate structure, withoutexpanding at least one second cavity of the plurality of U-shaped cavities, where formingthe plurality of U-shaped cavities facilitates fabricating the circuit structure. In oneembodiment, the circuit structure includes first and second transistors, having differentdevice architectures, the first transistor having a higher mobility characteristic than thesecond transistor.

申请人：GLOBALFOUNDRIES INC.

地址：Grand Cayman KY

国籍：KY

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