semiconductor Inc.
GM8205A
PbPb freeDual N-Channel High Density Trench MOSFET (20V, 6.0A)
PRODUCT SUMMARY
VDSS 20V
ID 6.0A
RDS(on) (m-ohm) Max 28 @ VGS =4.0V, ID=6.0A 40 @ VGS =2.5V, ID=5.2A
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance • Lead free product is acquired • Surface mount Package
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM PD IS Tj, Tstg RθJA
Drain Current (Continuous)
Ratings Units 20 ±12 6.0
V V A
Drain Current (Pulsed) a 20 A Total Power Dissipation @TA=25oC 2.0 W Maximum Diode Forward Current
Operating Junction and Storage Temperature Range
1.7 -55 to +150
A °C
Thermal Resistance Junction to Ambient (PCB mounted)b 62 °C/W
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
b: 1-in2 2oz Cu PCB board
DS-GM8205A-REV00
1
Gem micro
semiconductor Inc.
GM8205A
PbPb freeElectrical Characteristics (TA=25°C, unless otherwise noted)
Symbol Characteristic Test Conditions Min. Typ. Max.Unit • OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage IDSS IGSS
Zero Gate Voltage Drain Current Gate-Body Leakage Current
b
VGS=0V, ID=250uA 20 - - V VDS=20V, VGS=0V - - 1 uA VGS=±12V, VDS=0V
- - ±100
nA
• ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-State Resistance gFS Forward Transconductance
VGS=4.0V, ID=6.0A - 20 28 mΩ
VGS=2.5V, ID=5.2A - 26 40 VDS=10V, ID=6.0A
- 5 - S VDS=VGS, ID=250uA 0.6 0.7 1.2 V • DYNAMIC CHARACTERISTICS
Ciss Input Capacitance Coss Output Capacitance
Crss Reverse Transfer Capacitance
C
C
- 559 - VDS=8V, VGS=0V, f=1MHz
- 148 - PF - 127 - • SWITCHING CHARACTERISTICS
Qg
Total Gate Charge
VDS=10V, ID=3.0A, VGS=4.5V
-
5
-
Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time
VDD=10V, RL=10Ω, ID=1A, VGEN=10V, RG=6Ω
- 0.9 - nC - 1.4 - - 10.2 - - 7 - nS
- 33 - - 6.8 - • Drain-Source Diode Characteristics
VSD
DS-GM8205A-REV00
Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A - - 1.2 V Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
2
Gem micro
semiconductor Inc.
GM8205A
PbPb freeCharacteristics Curve
DS-GM8205A-REV00
3
Gem micro
semiconductor Inc.
GM8205A
PbPb freeCharacteristics Curve
DS-GM8205A-REV00
4
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