专利名称：FLASH MEMORY DEVICE AND MEMORY
SYSTEM
发明人：Ki-Tae PARK,Myoung Gon KANG申请号：US12509611申请日：20090727
公开号：US20100046290A1公开日：20100225
专利附图：
摘要：A flash memory device includes a first switch connecting one of a first cell stringand a second cell string to a first bit line selectively, a second switch connecting thesecond cell string to a second bit line, and a control logic circuit providing bias voltages
to the first and second cell strings through the first and second bit lines respectively andcontrolling the first and second cell stings to be simultaneously programmed.
申请人：Ki-Tae PARK,Myoung Gon KANG
地址：Seongnam-si KR,Suwon-si KR
国籍：KR,KR
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