S-80914CNNB-G8JT2G资料

2021-08-09 来源：步旅网

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Rev.3.3_00

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)

S-809xxC SeriesThe S-809xxC Series is a high-precision voltage detector developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±2.0 %. A time delayed reset can be accomplished with the addition of an external capacitor. Two output forms, Nch open-drain and CMOS output, are available.

󰂄 Features

• Ultra-low current consumption 1.0 μA typ. (Detection voltage ≤ 1.4 V, at VDD=2.0 V) 1.1 μA typ. (Detection voltage ≥ 1.5 V, at VDD=3.5 V) • High-precision detection voltage ±2.0 % • Operating voltage range 0.7 V to 10.0 V • Hysteresis characteristics 5 % typ. • Detection voltage 1.3 V to 6.0 V (0.1 V step) • Output forms Nch open-drain output (Active Low) CMOS output (Active Low) • Lead-free products

󰂄 Applications

• Power supply monitor for portable equipment such as notebook PCs, digital still cameras, PDAs and cellular phones

• Constant voltage power monitor for cameras, video equipment and communication equipment • Power monitor and reset for CPUs and microcomputers

󰂄 Packages

Package name Drawing code

Package Tape Reel Land SC-82AB NP004-A NP004-A NP004-A — SOT-23-5 MP005-A MP005-A MP005-A — SNT-4A PF004-A PF004-A PF004-A PF004-A

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

󰂄 Block Diagrams

1. Nch Open-drain Output Products

VDD

*1 +−Delaycircuit*1*1OUT VREF VSS

*1. Parasitic diode

Figure 1

2. CMOS Output Products

VDD*1*1 +−Delaycircuit*1*1OUT

VREF VSSCD

*1. Parasitic diode

Figure 2

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

󰂄 Product Name Structure

The detection voltage, output form and packages for S-809xxC Series can be selected at the user's request. Refer to the \"1. Product Name\" for the construction of the product name and \"2. Product Name List\" for the full product names. 1. Product Name

- 809xx C x xx - xxx xx GIC direction in tape specifications*1 T2: SC-82AB, SOT-23-5 TF: SNT-4A Product code*2 Package code NB: SC-82AB MC: SOT-23-5 PF: SNT-4A Output form N: Nch open-drain output (Active Low) L: CMOS output (Active Low) Detection voltage value 13 to 60 (e.g. When the detection voltage is 1.3 V, it is expressed as 13.) *1. Refer to the taping specifications at the end of this book. *2. Refer to the Table 1 to 2 in the “2. Product Name List”

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

2. Product Name List

2-1. Nch Open-drain Output Products

Table 1

Hysteresis width (Typ.) 0.065 V 0.070 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V 0.160 V 0.165 V 0.170 V 0.175 V 0.180 V 0.185 V 0.190 V 0.195 V 0.200 V 0.205 V 0.210 V 0.215 V 0.220 V 0.225 V 0.230 V 0.235 V 0.240 V 0.245 V 0.250 V 0.255 V 0.260 V 0.265 V 0.270 V 0.275 V 0.280 V 0.285 V 0.290 V 0.295 V 0.300 V SC-82AB SOT-23-5 SNT-4A S-80913CNNB-G8HT2G S-80914CNNB-G8JT2G S-80915CNNB-G8KT2G S-80916CNNB-G8LT2G S-80917CNNB-G8MT2G S-80918CNNB-G8NT2G S-80919CNNB-G8PT2G S-80920CNNB-G8QT2G S-80921CNNB-G8RT2G S-80922CNNB-G8ST2G S-80923CNNB-G8TT2G S-80924CNNB-G8UT2G S-80925CNNB-G8VT2G S-80926CNNB-G8WT2G S-80927CNNB-G8XT2G S-80928CNNB-G8YT2G S-80929CNNB-G8ZT2G S-80930CNNB-G80T2G S-80931CNNB-G81T2G S-80932CNNB-G82T2G S-80933CNNB-G83T2G S-80934CNNB-G84T2G S-80935CNNB-G85T2G S-80936CNNB-G86T2G S-80937CNNB-G87T2G S-80938CNNB-G88T2G S-80939CNNB-G89T2G S-80940CNNB-G9AT2G S-80941CNNB-G9BT2G S-80942CNNB-G9CT2G S-80943CNNB-G9DT2G S-80944CNNB-G9ET2G S-80945CNNB-G9FT2G S-80946CNNB-G9GT2G S-80947CNNB-G9HT2G S-80948CNNB-G9JT2G S-80949CNNB-G9KT2G S-80950CNNB-G9LT2G S-80951CNNB-G9MT2G S-80952CNNB-G9NT2G S-80953CNNB-G9PT2G S-80954CNNB-G9QT2G S-80955CNNB-G9RT2G S-80956CNNB-G9ST2G S-80957CNNB-G9TT2G S-80958CNNB-G9UT2G S-80959CNNB-G9VT2G S-80960CNNB-G9WT2G S-80913CNMC-G8HT2G S-80913CNPF-G8HTFG S-80914CNMC-G8JT2G S-80914CNPF-G8JTFG S-80915CNMC-G8KT2G S-80915CNPF-G8KTFG S-80916CNMC-G8LT2G S-80916CNPF-G8LTFG S-80917CNMC-G8MT2G S-80917CNPF-G8MTFG S-80918CNMC-G8NT2G S-80918CNPF-G8NTFG S-80919CNMC-G8PT2G S-80919CNPF-G8PTFG S-80920CNMC-G8QT2G S-80920CNPF-G8QTFG S-80921CNMC-G8RT2G S-80921CNPF-G8RTFG S-80922CNMC-G8ST2G S-80922CNPF-G8STFG S-80923CNMC-G8TT2G S-80923CNPF-G8TTFG S-80924CNMC-G8UT2G S-80924CNPF-G8UTFG S-80925CNMC-G8VT2G S-80925CNPF-G8VTFG S-80926CNMC-G8WT2G S-80926CNPF-G8WTFG S-80927CNMC-G8XT2G S-80927CNPF-G8XTFG S-80928CNMC-G8YT2G S-80928CNPF-G8YTFG S-80929CNMC-G8ZT2G S-80929CNPF-G8ZTFG S-80930CNMC-G80T2G S-80930CNPF-G80TFG S-80931CNMC-G81T2G S-80931CNPF-G81TFG S-80932CNMC-G82T2G S-80932CNPF-G82TFG S-80933CNMC-G83T2G S-80933CNPF-G83TFG S-80934CNMC-G84T2G S-80934CNPF-G84TFG S-80935CNMC-G85T2G S-80935CNPF-G85TFG S-80936CNMC-G86T2G S-80936CNPF-G86TFG S-80937CNMC-G87T2G S-80937CNPF-G87TFG S-80938CNMC-G88T2G S-80938CNPF-G88TFG S-80939CNMC-G89T2G S-80939CNPF-G89TFG S-80940CNMC-G9AT2G S-80940CNPF-G9ATFG S-80941CNMC-G9BT2G S-80941CNPF-G9BTFG S-80942CNMC-G9CT2G S-80942CNPF-G9CTFG S-80943CNMC-G9DT2G S-80943CNPF-G9DTFG S-80944CNMC-G9ET2G S-80944CNPF-G9ETFG S-80945CNMC-G9FT2G S-80945CNPF-G9FTFG S-80946CNMC-G9GT2G S-80946CNPF-G9GTFG S-80947CNMC-G9HT2G S-80947CNPF-G9HTFG S-80948CNMC-G9JT2G S-80948CNPF-G9JTFG S-80949CNMC-G9KT2G S-80949CNPF-G9KTFG S-80950CNMC-G9LT2G S-80950CNPF-G9LTFG S-80951CNMC-G9MT2G S-80951CNPF-G9MTFG S-80952CNMC-G9NT2G S-80952CNPF-G9NTFG S-80953CNMC-G9PT2G S-80953CNPF-G9PTFG S-80954CNMC-G9QT2G S-80954CNPF-G9QTFG S-80955CNMC-G9RT2G S-80955CNPF-G9RTFG S-80956CNMC-G9ST2G S-80956CNPF-G9STFG S-80957CNMC-G9TT2G S-80957CNPF-G9TTFG S-80958CNMC-G9UT2G S-80958CNPF-G9UTFG S-80959CNMC-G9VT2G S-80959CNPF-G9VTFG S-80960CNMC-G9WT2G S-80960CNPF-G9WTFG Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

2-2. CMOS Output Products

Table 2

Detection voltage range 1.3 V ±2.0 % 1.4 V ±2.0 % 1.5 V ±2.0 % 1.6 V ±2.0 % 1.7 V ±2.0 % 1.8 V ±2.0 % 1.9 V ±2.0 % 2.0 V ±2.0 % 2.1 V ±2.0 % 2.2 V ±2.0 % 2.3 V ±2.0 % 2.4 V ±2.0 % 2.5 V ±2.0 % 2.6 V ±2.0 % 2.7 V ±2.0 % 2.8 V ±2.0 % 2.9 V ±2.0 % 3.0 V ±2.0 % 3.1 V ±2.0 % 3.2 V ±2.0 % 3.3 V ±2.0 % 3.4 V ±2.0 % 3.5 V ±2.0 % 3.6 V ±2.0 % 3.7 V ±2.0 % 3.8 V ±2.0 % 3.9 V ±2.0 % 4.0 V ±2.0 % 4.1 V ±2.0 % 4.2 V ±2.0 % 4.3 V ±2.0 % 4.4 V ±2.0 % 4.5 V ±2.0 % 4.6 V ±2.0 % 4.7 V ±2.0 % 4.8 V ±2.0 % 4.9 V ±2.0 % 5.0 V ±2.0 % 5.1 V ±2.0 % 5.2 V ±2.0 % 5.3 V ±2.0 % 5.4 V ±2.0 % 5.5 V ±2.0 % 5.6 V ±2.0 % 5.7 V ±2.0 % 5.8 V ±2.0 % 5.9 V ±2.0 % 6.0 V ±2.0 % Hysteresis width (Typ.) 0.065 V 0.070 V 0.075 V 0.080 V 0.085 V 0.090 V 0.095 V 0.100 V 0.105 V 0.110 V 0.115 V 0.120 V 0.125 V 0.130 V 0.135 V 0.140 V 0.145 V 0.150 V 0.155 V 0.160 V 0.165 V 0.170 V 0.175 V 0.180 V 0.185 V 0.190 V 0.195 V 0.200 V 0.205 V 0.210 V 0.215 V 0.220 V 0.225 V 0.230 V 0.235 V 0.240 V 0.245 V 0.250 V 0.255 V 0.260 V 0.265 V 0.270 V 0.275 V 0.280 V 0.285 V 0.290 V 0.295 V 0.300 V SC-82AB SOT-23-5 SNT-4A S-80913CLNB-G6HT2G S-80914CLNB-G6JT2G S-80915CLNB-G6KT2G S-80916CLNB-G6LT2G S-80917CLNB-G6MT2G S-80918CLNB-G6NT2G S-80919CLNB-G6PT2G S-80920CLNB-G6QT2G S-80921CLNB-G6RT2G S-80922CLNB-G6ST2G S-80923CLNB-G6TT2G S-80924CLNB-G6UT2G S-80925CLNB-G6VT2G S-80926CLNB-G6WT2G S-80927CLNB-G6XT2G S-80928CLNB-G6YT2G S-80929CLNB-G6ZT2G S-80930CLNB-G60T2G S-80931CLNB-G61T2G S-80932CLNB-G62T2G S-80933CLNB-G63T2G S-80934CLNB-G64T2G S-80935CLNB-G65T2G S-80936CLNB-G66T2G S-80937CLNB-G67T2G S-80938CLNB-G68T2G S-80939CLNB-G69T2G S-80940CLNB-G7AT2G S-80941CLNB-G7BT2G S-80942CLNB-G7CT2G S-80943CLNB-G7DT2G S-80944CLNB-G7ET2G S-80945CLNB-G7FT2G S-80946CLNB-G7GT2G S-80947CLNB-G7HT2G S-80948CLNB-G7JT2G S-80949CLNB-G7KT2G S-80950CLNB-G7LT2G S-80951CLNB-G7MT2G S-80952CLNB-G7NT2G S-80953CLNB-G7PT2G S-80954CLNB-G7QT2G S-80955CLNB-G7RT2G S-80956CLNB-G7ST2G S-80957CLNB-G7TT2G S-80958CLNB-G7UT2G S-80959CLNB-G7VT2G S-80960CLNB-G7WT2G S-80913CLMC-G6HT2G S-80913CLPF-G6HTFG S-80914CLMC-G6JT2G S-80914CLPF-G6JTFG S-80915CLMC-G6KT2G S-80915CLPF-G6KTFG S-80916CLMC-G6LT2G S-80916CLPF-G6LTFG S-80917CLMC-G6MT2G S-80917CLPF-G6MTFG S-80918CLMC-G6NT2G S-80918CLPF-G6NTFG S-80919CLMC-G6PT2G S-80919CLPF-G6PTFG S-80920CLMC-G6QT2G S-80920CLPF-G6QTFG S-80921CLMC-G6RT2G S-80921CLPF-G6RTFG S-80922CLMC-G6ST2G S-80922CLPF-G6STFG S-80923CLMC-G6TT2G S-80923CLPF-G6TTFG S-80924CLMC-G6UT2G S-80924CLPF-G6UTFG S-80925CLMC-G6VT2G S-80925CLPF-G6VTFG S-80926CLMC-G6WT2G S-80926CLPF-G6WTFG S-80927CLMC-G6XT2G S-80927CLPF-G6XTFG S-80928CLMC-G6YT2G S-80928CLPF-G6YTFG S-80929CLMC-G6ZT2G S-80929CLPF-G6ZTFG S-80930CLMC-G60T2G S-80930CLPF-G60TFG S-80931CLMC-G61T2G S-80931CLPF-G61TFG S-80932CLMC-G62T2G S-80932CLPF-G62TFG S-80933CLMC-G63T2G S-80933CLPF-G63TFG S-80934CLMC-G64T2G S-80934CLPF-G64TFG S-80935CLMC-G65T2G S-80935CLPF-G65TFG S-80936CLMC-G66T2G S-80936CLPF-G66TFG S-80937CLMC-G67T2G S-80937CLPF-G67TFG S-80938CLMC-G68T2G S-80938CLPF-G68TFG S-80939CLMC-G69T2G S-80939CLPF-G69TFG S-80940CLMC-G7AT2G S-80940CLPF-G7ATFG S-80941CLMC-G7BT2G S-80941CLPF-G7BTFG S-80942CLMC-G7CT2G S-80942CLPF-G7CTFG S-80943CLMC-G7DT2G S-80943CLPF-G7DTFG S-80944CLMC-G7ET2G S-80944CLPF-G7ETFG S-80945CLMC-G7FT2G S-80945CLPF-G7FTFG S-80946CLMC-G7GT2G S-80946CLPF-G7GTFG S-80947CLMC-G7HT2G S-80947CLPF-G7HTFG S-80948CLMC-G7JT2G S-80948CLPF-G7JTFG S-80949CLMC-G7KT2G S-80949CLPF-G7KTFG S-80950CLMC-G7LT2G S-80950CLPF-G7LTFG S-80951CLMC-G7MT2G S-80951CLPF-G7MTFG S-80952CLMC-G7NT2G S-80952CLPF-G7NTFG S-80953CLMC-G7PT2G S-80953CLPF-G7PTFG S-80954CLMC-G7QT2G S-80954CLPF-G7QTFG S-80955CLMC-G7RT2G S-80955CLPF-G7RTFG S-80956CLMC-G7ST2G S-80956CLPF-G7STFG S-80957CLMC-G7TT2G S-80957CLPF-G7TTFG S-80958CLMC-G7UT2G S-80958CLPF-G7UTFG S-80959CLMC-G7VT2G S-80959CLPF-G7VTFG S-80960CLMC-G7WT2G S-80960CLPF-G7WTFG 5

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

󰂄 Pin Configurations

Table 3 SC-82AB Top view Pin No. Symbol Description 4 3 1 VSS GND pin 1 2

Figure 3

SOT-23-5

Top view Pin 5 4 3 4 1 2 3

Figure 4

SNT-4A

Top view Pin 1 1 4 2 3

Figure 5

2 VDD Voltage input pin 3 CD Connection pin for delay capacitor 4 OUT Voltage detection output pin

Table 4

No. Symbol Description 1 OUT Voltage detection output pin 2 VDD Voltage input pin VSS GND pin

NC*1 No connection 5 CD Connection pin for delay capacitor *1. The NC pin is electrically open.

The NC pin can be connected to VDD or VSS.

Table 5

No. Symbol Description VSS GND pin

2 OUT Voltage detection output pin

3 CD Connection pin for delay capacitor 4 VDD Voltage input pin

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

󰂄 Absolute Maximum Ratings

Table 6

Power Dissipation (PD) [mW] Item Symbol Power supply voltage VDD−VSS CD pin input voltage VCD Output Nch open-drain output products

VOUT

voltage

CMOS output products VSS−0.3 to VDD+0.3

Output current IOUT 50 mA Power SC-82AB PD 150 (When not mounted on board)mW

*1dissipation 350

SOT-23-5 250 (When not mounted on board)

*1 600 SNT-4A 140 (When not mounted on board)

*1 300 Operating ambient temperature Topr °C −40 to +85 Storage temperature Tstg −40 to +125 *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7

Caution The absolute maximum ratings are rated values exceeding which the product could suffer

physical damage. These values must therefore not be exceeded under any conditions.

700

(Ta=25°C unless otherwise specified)Absolute maximum ratings Unit

12 V VSS−0.3 to VDD+0.3

VSS −0.3 to VSS+12

60050040030020010000 SNT-4ASOT-23-5SC-82AB10015050Ambient Temperature(Ta) [°C] Figure 6 Power Dissipation of Package (When Mounted on Board)

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

󰂄 Electrical Characteristics

1. Nch Open-drain Output Products

Table 7

(Ta=25°C unless otherwise specified) Test Item Symbol Condition Min. Typ. Max. Unit circuit −VDET(S)−VDET(S) −VDET(S) — Detection voltage*1 V 1 −VDET ×0.98 ×1.02 −VDET −VDET −VDET Hysteresis width VHYS S-80913 to 14 ×0.03 ×0.05 ×0.08 −VDET −VDET −VDET S-80915 to 60 ×0.03 ×0.05 ×0.07 S-80913 to 14— 1.0 2.5 2 Current consumption ISS µA VDD=2.0 V S-80915 to 26— 1.1 2.8 VDD=3.5 V S-80927 to 39— 1.2 3.0 VDD=4.5 V S-80940 to 54— 1.3 3.3 VDD=6.0 V S-80955 to 60— 1.4 3.5 VDD=7.5 V Operating voltage VDD — 0.7 — 10.0 V 1 Output transistorVDD=0.95 V 0.23 Output current IOUT 0. 64 — mA 3 Nch, VDS=0.5 VS-80913 to 14VDD=1.2 V 0.59 1.36 — S-80915 to 60VDD=2.4 V 2.88 4.98 — S-80927 to 60Output transistor, — — 0.1 Leakage current ILEAK µA Nch, VDS=10.0 V, VDD=10.0 V VDD=2.0 V 2.7 3.6 4.5 ms 4 Delay time tD CD=4.7 nF S-80913 to 14VDD=3.5 V 20 27 34 S-80915 to 26VDD=4.5 V S-80927 to 39VDD=6.0 V S-80940 to 54VDD=7.5 V S-80955 to 60∆−VDETppm/ Detection voltage — 1 Ta=−40°C to +85°C ±100 ±350 *2°C temperature coefficient ∆Ta•−VDET *1. −VDET: Actual detection voltage, −VDET(S): Specified detection voltage (The center value of detection voltage range in

Table 1.)

*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following quation.

∆−VDET∆−VDET*1*2*3

[mV/°C]=−VDET (Typ.) [V]× [ppm/°C]÷1000 ∆Ta∆Ta•−VDET

*1. Temperature change ratio of the detection voltage *2. Specified detection voltage

*3. Detection voltage temperature coefficient

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

2. CMOS Output Products

Table 8

(Ta=25°C unless otherwise specified)Test Item Symbol Condition Min. Typ. Max. Unit circuit −VDET(S)−VDET(S) −VDET(S) V 1 — Detection voltage*1 −VDET ×0.98 ×1.02 −VDET −VDET −VDET Hysteresis width VHYS S-80913 to 14 ×0.03 ×0.05 ×0.08 −VDET −VDET −VDET S-80915 to 60 ×0.03 ×0.05 ×0.07 1.0 S-80913 to 14— 2.5 2 Current consumption ISS μA VDD=2.0 V 1.1 S-80915 to 26— 2.8 VDD=3.5 V 1.2 S-80927 to 39— 3.0 VDD=4.5 V 1.3 S-80940 to 54— 3.3 VDD=6.0 V 1.4 S-80955 to 60— 3.5 VDD=7.5 V Operating voltage VDD — 0.7 — 10.0 V 1 Output transistor, VDD=0.95 V Output current IOUT 0.23 0.64 — mA 3 Nch, VDS=0.5 V S-80913 to 14VDD=1.2 V 0.59 1.36 — S-80915 to 60VDD=2.4 V 2.88 4.98 — S-80927 to 60Output transistor, VDD=4.8 V 1.43 2.39 — 5 Pch, VDS=0.5 V S-80913 to 39VDD=6.0 V 1.68 2.78 — S-80940 to 54VDD=8.4 V 2.08 3.42 — S-80955 to 60VDD=2.0 V Delay time tD 2.7 3.6 4.5 ms 4 CD=4.7 nF S-80913 to 14VDD=3.5 V 18 24 30 S-80915 to 26VDD=4.5 V S-80927 to 39VDD=6.0 V S-80940 to 54VDD=7.5 V S-80955 to 60Δ−VDETppm/ Detection voltage — 1 ±100 ±350 Ta=−40°C to +85°C *2°C temperature coefficient ΔTa•−VDET *1. −VDET: Actual detection voltage, −VDET(S): Specified detection voltage (The center value of detection voltage range in Table 2.)

*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.

Δ−VDETΔ−VDET*1*2*3

[mV/°C]=−VDET (Typ.) [V]× [ppm/°C]÷1000 ΔTaΔTa•−VDET

*1. Temperature change ratio of the detection voltage *2. Specified detection voltage

*3. Detection voltage temperature coefficient

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

󰂄 Test Circuits

VDD VDDV S-809xxC OUT Series VSS CD V R 100 kΩ

AVDD VDDS-809xxC OUTSeries VSS CD

*1. R is unnecessary for CMOS output products.

Figure 7

VDD VDD V S-809xxC OUT Series VSSCD V A Figure 8

VDD S-809xxC OUT Series VSS CD R 100 kΩ Oscillo-scope *1

VDS

P.G.

Figure 9

Figure 10

*1. R is unnecessary for CMOS output products.

VDDVDD V S-809xxC OUT Series VSSCD V

VDSA

Figure 11

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

󰂄 Timing Chart

1. Nch Open-drain Output Products

VDD Hysteresis width (VHYS)

Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS VDD VDDOutput from the OUT pin VSStD CD OUTVSS R 100 kΩ

Figure 12

2. CMOS Output Products

Hysteresis width (VHYS)

VDD Release voltage (+VDET) Detection voltage (−VDET)Minimum operating voltage VSS VDD CD OUTVSS VVDDOutput from the OUT pin VSStD Remark For values of VDD less than minimum operating voltage, values of OUT pin output is free of the

shaded region.

Figure 13

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

󰂄 Operation

1. Basic Operation: CMOS Output (Active Low)

1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is

OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in

(RB+RC)•VDD

. Figure 14 is OFF, the comparator input voltage is

RA+RB+RC1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above

the detection voltage −VDET. When the VDD falls below −VDET (point A in Figure 15), the Nch

transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time the Nch transistor N1 in Figure 14 becomes ON, the comparator input voltage is changed to RB•VDD

RA+RB1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to

the VDD when the output is pulled up to the VDD. 1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still

appears even when the VDD surpasses −VDET, as long as it does not exceed the release voltage +VDET. 1-5. When VDD rises above +VDET (point B in Figure 15), the Nch transistor becomes OFF, and the Pch

transistor becomes ON, and VDD appears at the output after the delay time (tD) counted by the delay circuit.

VDD RA *1*1 + − RB VREF RC N1 Delay circuit PchOUT

*1 *1Nch VSS CD CD

*1. Parasitic diode

Figure 14 Operation 1

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

(1)(2)Hysteresis width (VHYS)A(3)(4)(5)VDD BRelease volatage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSSVDDOutput from OUT pin VSStD

Figure 15 Operation 2

2. Delay Circuit

The delay circuit delays the output signal from the time at which the power voltage (VDD) exceeds the release voltage (+VDET) when VDD is turned on. The output signal is not delayed when the VDD goes below the detection voltage (−VDET) (Refer to Figure 15). The delay time (tD) is determined by the time constant of the built-in constant current (approx. 100 nA ) and the attached external capacitor (CD), and calculated from the following equation.

tD (ms)=Delay coefficient×CD (nF) Delay coefficient: (25°C)

Detection voltage −VDET ≤ 1.4 V Min. 0.57, Typ. 0.77, Max. 0.96 Detection voltage −VDET ≥ 1.5 V

Nch open-drain output products: Min. 4.3, Typ. 5.7, Max. 7.2 CMOS output products: Min. 3.8, Typ. 5.1, Max. 6.4

Caution 1. When the CD pin is open, a double pulse shown in Figure 16 may appear at release. To

avoid the double pulse, attach 20 pF or larger capacitor to the CD pin. Do not apply voltage to the CD pin.

VOUT time Figure 16

2. Print circuit board layout should be made in such a way that no current flows into or flows from the CD pin since the impedance of the CD pin is high, otherwise correct delay time cannot be provided.

3. There is no limit for the capacitance of the external capacitor (CD) as long as the leakage current of the capacitor can be ignored against the built-in constant current value. Leakage current causes deviation in delay time. When the leakage current is larger than the built-in constant current, no release takes place.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

3. Other characteristics

3-1. Temperature Characteristic of Detection Voltage

The shaded area in Figure 17 shows the temperature characteristics of the detection voltage.

−VDET [V] +0.945mV/°C −VDET25*1 −0.945 mV/°C [°C] −40 25 85 Ta

*1. −VDET25 is an actual detection voltage value at 25 °C.

Figure 17 Temperature Characteristic of Detection Voltage (Example forS-80927C)

3-2. Temperature Characteristics of Release Voltage

Δ+VDET

for the release voltage is calculated by the temperature

ΔTa

Δ−VDET

coefficient of the detection voltage as follows:

ΔTa

Δ+VDET+VDETΔ−VDET

× =

ΔTa−VDETΔTa

The temperature coefficients for the release voltage and the detection voltage have the same sign consequently.

3-3. Temperature Characteristics of Hysteresis Voltage The temperature coefficient

The temperature characteristics for the hysteresis voltage is expressed as calculated as follows: Δ+VDETΔ−VDETVΔ−VDET

−=HYS× ΔTaΔTa−VDETΔTa

Δ+VDETΔ−VDET

and is −

ΔTaΔTa

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

󰂄 Standard Circuit

VDD CDCD*2 *1R 100 kΩ OUT VSS

*1. R is unnecessary for CMOS output products.

*2. The delay capacitor (CD) should be connected directly to the CD pin and to the VSS pin.

Figure 18

Caution The above connection diagram and constant will not guarantees successful operation.

Perform through evaluation using the actual application to set the constant.

󰂄 Technical Terms

1. Detection Voltage (−VDET), Release Voltage (+VDET)

The detection voltage (−VDET) is a voltage at which the output turns to low. This detection voltage varies slightly among products of the same specification. The variation of detection voltage between the

specified minimum (−VDET) Min. and maximum (−VDET) Max. is called the detection voltage range (Refer to Figure 19).

Example: For the S-80927CN, detection voltage lies in the range of 2.646≤(−VDET) ≤ 2.754.

This means that some S-80927CNs have 2.646 V for −VDET and some have 2.754 V.

The release voltage (+VDET) is a voltage at which the output turns to high. This release voltage varies slightly among products of the same specification. The variation of release voltage between the specified minimum (+VDET) Min. and maximum (+VDET) Max. is called the release voltage range (Refer to Figure 20). The range is calculated from the actual detection voltage (−VDET) of a product and is expressed by −VDET×1.03≤+VDET≤−VDET×1.08 for S-80913 to S-80914, and by −VDET×1.03≤+VDET≤−VDET ×1.07 for S-80915 to S-80960.

Example: For the S-80927CN, the release voltage lies in the range of 2.725≤(+VDET)≤ 2.947.

This means that some S-80927CNs have 2.725 V for +VDET and some have 2.947 V.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

VDD Detection voltage (−VDET) Max. (−VDET) Min. Detection voltagerange

Release voltage (+VDET) Max.(+VDET) Min. VDD Release voltage rangeOUT OUT Delay time

Figure 19 Detection Voltage (CMOS output products) Figure 20 Release Voltage (CMOS output products)

Remark Although the detection voltage and release voltage overlap in the range of 2.725 V to 2.754 V,

+VDET is always larger than −VDET.

2. Hysteresis Width (VHYS)

Hysteresis width is the voltage difference between the detection voltage and the release voltage (The

voltage at point B−The voltage at point A=VHYS in Figure 15). The existence of the hysteresis width avoids malfunction caused by noise on input signal.

3. Delay Time (tD)

Delay time is a time internally measured from the instant at which input voltage to the VDD pin exceeds the release voltage (+VDET) to the point at which the output of the OUT pin inverts. The delay time changes according to the external capacitor (CD).

VVDD +VDET OUT tD

Figure 21

4. Through-type Current

The through-type current refers to the current that flows instantaneously at the time of detection and release of a voltage detector. The through-type current is large in CMOS output products, and small in Nch open-drain output products.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

5. Oscillation

In applications where a resistor is connected to the voltage detector input (Figure 22), taking a CMOS active low product for example, the through-type current, which is generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current] × [input resistance] across the resistor. When the input voltage drops below the detection voltage (−VDET) as a result, the output voltage goes to low level. In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes from low to high. The through-type current again generated, a voltage drop appears, and repeatiing the process finally induces oscillation.

VDD RAVIN S-809xxCLOUTRBVSS Figure 22 Example for Bad Implementation of Input Voltage Divider (CMOS Output Products)

󰂄 Precautions

• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • In CMOS output products of the S-809xxC series, the through-type current flows at the detection and the release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type current during releasing. • When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the patents on the circuits described herein. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the products including this IC upon patents owned by a third party.

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

󰂄 Characteristics (Typical Data)

1. Detection Voltage (VDET) - Temperature (Ta) S-80913CN1.501.451.40S-80914CN1.601.55+VDETVDET(V)1.351.301.251.20-40-200VDET(V)1.501.451.401.351.30-40-20+VDET-VDET-VDETTa (°C)20406080020406080 S-80960CN6.406.306.20Ta (°C) S-80915CN1.601.55+VDET+VDETVDET (V)1.501.451.40-40-200VDET(V)-VDET6.106.005.90-VDETTa (°C)204060805.80-40-200 S-80914CN87Ta (°C)204060802. Hysteresis Voltage Width (VHYS) - Temperature (Ta) S-80913CN87 VHYS(%)543-40-200VHYS(%)66543Ta (°C)20406080-40-20020406080 S-80960CN87Ta (°C) S-80915CN87VHYS (%)654-40-200VHYS (%)20406080654Ta (°C)-40-200 Seiko Instruments Inc.

Ta (°C)20406080 18

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

3. Current Consumption (ISS) - Input Voltage (VDD)

S-80913CL 3.0 Ta=25°C S-80914CLTa=25°C 2.5 16 μA 3.0 2.5 18 μA )2.0 2.0 A) A μ(1.5 μ (1.5 S S IS1.0 SI1.0 0.5 0.5 0.0 0.0 0 2 4 6 8 10 120 2 4 6 8 10 12V DD (V) V DD (V) S-80915CL Ta=25°C S-80960CL3.0 3.0 Ta=25°C 2.5 3.4 μA 2.5 13 μA 2.0 ))2.0 A μμA (1.5 ( 1.5 S S IS1.0 IS1.0 0.5 0.5 0.0 0.0 0 2 4 6 8 10 120 2 4 6 8 10 12V DD (V) V DD (V) 4. Current Consumption (I) - Temperature (Ta) SS

S-80913CNVDD=2.0VS-80914CNVDD=2.0V2.02.01.51.5)A)Aμμ(1.0(1.0SSISIS0.50.50.00.0-40-20020406080-40-20020406080Ta (°C) Ta (°C)S-80915CNVDD=3.5VS-80960CNVDD=7.5V2.02.01.51.5)A)μA(1.0μ(1.0SSISIS0.50.50.00.0-40-20020406080-40-20020406080Ta (°C) Ta (°C)

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

5. Nch Transistor Output Current (IOUT) - VDS S-80960CL/CN45403530252015105001Ta=25°C6.0V206. Pch Transistor Output Current (IOUT) - VDS S-80915CL25Ta=25ºC8.4VIOUT(mA)4.8VIOUT (mA)7.2V1510503.6VVDD=2.4V0244.8V6.0V3.6V2.4VVDD=1.2V2345 7. Nch Transistor Output Current (IOUT) - Input Voltage(VDD) S-80914CL/CN3.53.02.5Ta=-40°CVDS=0.5VVDS (V)VDS (V)6810 VDS=0.5VS-80960CL2520Ta=-40°C25°CIOUT(mA)2.01.51.00.50.000.5185°C1.52IOUT (mA)25°C1510585°C00246810VDD (V)VDD (V) 8. Pch Transistor Output Current (IOUT) - Input Voltage(VDD) S-80913CL3.02.5VDS=0.5V VDS=0.5VTa=-40°CS-80915CL65Ta=-40°CIOUT(mA)2.01.51.00.50.000.51IOUT(mA)25°C432185°C02468101225°C85°CVDD (V)1.522.530 (V)VDD 9. Minimum Operating Voltage - Input Voltage(VDD)

S-80913CN2.01.5Pull-up VDD: 100kΩ S-80915CN2.01.5Pull-up VDD: 100kΩVOUT(V)VOUT(V)Ta=-40°C1.00.50.000.525°C85°C11.52Ta=-40°C1.00.50.025°C85°C00.511.52VDD (V) Seiko Instruments Inc.

VDD (V) 20

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

10. Dynamic Response - COUT (CD pin; open) S-80913CL Ta=25°CS-80913CN Ta=25°C110)tpHL)tpLHssmm(( e0.1e1mmiitt eetpHLsno0.01sno0.1pstpLHpseRe0.001R0.010.000010.00010.0010.010.10.000010.00010.0010.010.1Load capacitance (μF) Load capacitance (μF)S-80914CL Ta=25°CS-80914CN Ta=25°C110))sstpLHmm(( e0.1e1mtpHLmiitt ees0.01snn0.1tpHLotpLHoppsseeR0.001R0.010.000010.00010.0010.010.10.000010.00010.0010.010.1Load capacitance (μF) Load capacitance (μF)S-80915CL Ta=25°CS-80915CN Ta=25°C110tpHL tpLH))ssm0.1m(( ee1mmiitt eetpHLssnno0.01tpLHo0.1ppsseeRR0.0010.010.000010.00010.0010.010.10.000010.00010.0010.010.1Load capacitance (μF) Load capacitance (μF)S-80960CL Ta=25°CS-80960CN Ta=25°C110tpHL tpLH))ssm0.1m(( ee1mtpLHmiitt eesno0.01sn0.1tpHLoppsseReR0.0010.010.000010.00010.0010.010.10.000010.00010.0010.010.1Load capacitance (μF)

Load capacitance (μF)Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

1 μs VIH

1 μs

VDD V VDD S-809xxC Series VSS CD OUT COUT R 100 kΩ

Input voltageVIL

VtpHL tpLH VDD×90 %

VDD

Output voltage VDD×10 %*1. VIH=10 V *2. VIL=0.7 V

*1. R is unnecessary for CMOS output products.

Figure 24 Measurement Circuit for Response Time Figure 23 Measurement Condition for Response Time

Caution The above connection diagram and constant will not guarantees successful operation.

Perform through evaluation using the actual application to set the constant.

11. Delay Time - CD Pin Capacitance(CD) ( No output pin capacitance) S-80913CN1000100 Ta=25°CS-80915CN100001000 Ta=25°Ctd (ms)0.11101001000td (ms)1010.11001010.10.010.01CD (nF)0.010.11101001000 CD=4.7(nF)CD (nF)12. Delay Time - Temperature(Ta) S-80913CN108 S-80915CN5040 CD=4.7(nF)td (ms)420-40-20020406080td (ms)63020100-40-20020406080Ta (°C) Ta (°C)

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)Rev.3.3_00 S-809xxC Series

VIH*1Input voltageVIL

1 μs

VDDVDD S-809 VSeries VSS CD CD VOUT R 100 kΩ

tD VDD×90 %

Ouput voltageVSS

*1. VIH=10V *2. VIL=0.7V

Figure 25 Measuring Conditions of Delay Time

Figure 26 Measurement Circuit for Delay Time

Caution The above connection diagram and constant will not guarantees successful operation.

Perform through evaluation using the actual application to set the constant.

󰂄 Application Circuit Examples

1. Microcomputer Reset Circuits

If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done.

Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. Reset circuits shown in Figures 27 to 28 can be easily constructed with the help of the S-809xxC Series that has a low operating voltage, a high-precision detection voltage, hysteresis and the reset circuits.

VDD1VDD2 VDDS-809xxCN S-809xxCL Microcomputer VSS

MicrocomputerVSS

Only for Nch open-drain products.

Figure 27 Example for Reset Circuits(S-809xxCL) Figure 28 Example for Reset Circuits(S-809xxCN)

Caution The above connection diagram and constant will not guarantees successful operation.

Perform through evaluation using the actual application to set the constant.

Seiko Instruments Inc.

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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) Rev.3.3_00S-809xxC Series

2. Change of Detection Voltage

In Nch open-drain output products of the S-809xxC Series, detection voltage can be changed using

resistance dividers or diodes as shown in Figures 29 to 30. In Figure 29, hysteresis width also changes.

VDD VDD

RA*1Vf1VIN+ (RA≤75 kΩ)S- 809xxCN Vf2OUT VINS- 809xxCN OUT(Only for Nch open-drain products) RBVSS− (Only for Nch open-drain products) VSS

RA+RB

•−VDET RBRA+RB

Hysteresis width=•VHYS

RBDetection voltage=

Detection voltage=Vf1+Vf2+(−VDET)

*1. RA should be 75 kΩ or less tp prevent oscillation.

Caution If RA and RB are large, the hysteresis

width may also be larger than the value given by the above equation due to through- type current (which flows slightly in an Nch open-drain products).

Figure 29

Figure 30

Caution The above connection diagram and constant will not guarantees successful operation.

Perform through evaluation using the actual application to set the constant.

Seiko Instruments Inc.

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2.0±0.21.3±0.2430.05120.16 -0.06+0.10.3+0.1 -0.050.4 -0.05+0.1No. NP004-A-P-SD-1.1TITLENo.SCALEUNITSC82AB-A-PKG DimensionsNP004-A-P-SD-1.1mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

ø1.5-0+0.14.0±0.12.0±0.054.0±0.11.1±0.10.2±0.05ø1.05±0.1(0.7) 2.2±0.22134Feed directionNo. NP004-A-C-SD-3.0TITLENo.SCALEUNITSC82AB-A-Carrier TapeNP004-A-C-SD-3.0mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

4.0±0.12.0±0.1ø1.5-0+0.11.1±0.10.2±0.054.0±0.1ø1.05±0.12.3±0.152134Feed directionNo. NP004-A-C-S1-2.0TITLENo.SCALEUNITSC82AB-A-Carrier TapeNP004-A-C-S1-2.0mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

12.5max.Enlarged drawing in the central partø13±0.29.0±0.3(60°)(60°)No. NP004-A-R-SD-1.1TITLENo.SCALEUNITmmSC82AB-A-ReelNP004-A-R-SD-1.1QTY.3,000Seiko Instruments Inc.元器件交易网www.cecb2b.com

2.9±0.21.9±0.2541230.16 -0.06 +0.10.95±0.10.4±0.1No. MP005-A-P-SD-1.2TITLENo.SCALEUNITSOT235-A-PKG DimensionsMP005-A-P-SD-1.2mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

4.0±0.1(10 pitches:40.0±0.2)+0.1ø1.5-02.0±0.050.25±0.1ø1.0-0+0.24.0±0.11.4±0.23.2±0.232145Feed directionNo. MP005-A-C-SD-2.1TITLENo.SCALEUNITSOT235-A-Carrier TapeMP005-A-C-SD-2.1mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

12.5max.Enlarged drawing in the central partø13±0.29.0±0.3(60°)(60°)No. MP005-A-R-SD-1.1TITLENo.SCALEUNITmmSOT235-A-ReelMP005-A-R-SD-1.1QTY.3,000Seiko Instruments Inc.元器件交易网www.cecb2b.com

1.2±0.044312+0.050.08-0.020.650.48±0.020.2±0.05No. PF004-A-P-SD-4.0TITLENo.SCALEUNITSNT-4A-A-PKG DimensionsPF004-A-P-SD-4.0mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

ø1.5 -0+0.12.0±0.054.0±0.10.25±0.055°1.45±0.1ø0.5 -0+0.14.0±0.10.65±0.052134Feed directionNo. PF004-A-C-SD-1.0TITLENo.SCALEUNITSNT-4A-A-Carrier TapePF004-A-C-SD-1.0mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

12.5max.Enlarged drawing in the central partø13±0.29.0±0.3(60°)(60°)No. PF004-A-R-SD-1.0TITLENo.SCALEUNITmmSNT-4A-A-ReelPF004-A-R-SD-1.0QTY.5,000Seiko Instruments Inc.元器件交易网www.cecb2b.com

0.521.160.520.30.350.3CautionMaking the wire pattern under the package is possible. However, note that the packagemay be upraised due to the thickness made by the silkscreen printing and of a solderresist on the pattern because this package does not have the standoff.No. PF004-A-L-SD-3.0TITLENo.SCALEUNITSNT-4A-A-Land RecommendationPF004-A-L-SD-3.0mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

• The information described herein is subject to change without notice.• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described hereinwhose related industrial properties, patents, or other rights belong to third parties. The application circuitexamples explain typical applications of the products, and do not guarantee the success of any specificmass-production design.• When the products described herein are regulated products subject to the Wassenaar Arrangement or otheragreements, they may not be exported without authorization from the appropriate governmental authority.• Use of the information described herein for other purposes and/or reproduction or copying without theexpress permission of Seiko Instruments Inc. is strictly prohibited.• The products described herein cannot be used as part of any device or equipment affecting the humanbody, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatusinstalled in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, thefailure or malfunction of semiconductor products may occur. The user of these products should thereforegive thorough consideration to safety design, including redundancy, fire-prevention measures, andmalfunction prevention, to prevent any accidents, fires, or community damage that may ensue.

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