专利名称：Method for manufacturing interconnect
structures incorporating air gap spacers
发明人：Satya V. Nitta,Shom Ponoth申请号：US14846800申请日：20150906公开号：US09613851B2公开日：20170404
专利附图：
摘要：A dual damascene article of manufacture comprises a trench containing aconductive metal column where the trench and the conductive metal column extenddown into and are contiguous with a via. The trench and the conductive metal column and
the via have a common axis. These articles comprise interconnect structures incorporatingair-gap spacers containing metal/insulator structures for Very Large Scale Integrated(VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in thisregard comprises a sidewall air-gap immediately adjacent the side walls of the trench andthe conductive metal column, the sidewall air-gap extending down to the via to a depthbelow a line fixed by the bottom of the trench, and continues downward in the via for adistance of from about 1 Angstrom below the line to the full depth of the via. In anotheraspect, the article of manufacture comprises a capped dual damascene structure.
申请人：International Business Machines Corporation
地址：Armonk NY US
国籍：US
代理机构：The Law Offices of Robert J. Eichelburg
代理人：Robert J. Eichelburg
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