AP80N03D 80A 30V TO-252

30V N-Channel Enhancement Mode MOSFET

Description

The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a

Battery protection or in other Switching application.

AP80N03D

General Features

VDS = 30V ID =80 A RDS(ON) < 6mΩ @ VGS=10V

Application

Battery protection Load switch

Uninterruptible power supply

Package Marking and Ordering Information Product ID AP80N03D Pack TO-252-3L Marking AP80N03D XXX YYYY Qty(PCS) 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Rating 30 ±20 80 51 320 88 42 54 0.43 -55 to 150 -55 to 150 62 2.3 Units V V A A A mJ A W W/℃ ℃ ℃ ℃/W ℃/W 1 AP80N03D Rve3.8 臺灣永源微電子科技有限公司

30V N-Channel Enhancement Mode MOSFET

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VDS=30V , VGS=0V , TJ=25℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=125℃ IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V VGS=10V , ID=20A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=10A VGS(th) △VGS(th) gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg EAS IS ISM VSD trr Qrr Gate Threshold Voltage VGS=VDS , ID =250uA VGS(th) Temperature Coefficient Forward Transconductance Total Gate Charge3 , 4 Gate-Source Charge3 , 4 Gate-Drain Charge3 , 4 Turn-On Delay Time3 , 4 Rise Time3 , 4 Turn-Off Delay Time3 , 4 Fall Time3 , 4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Single Pulse Avalanche Energy Continuous Source Current VG=VD=0V , Force Current Pulsed Source Current Diode Forward Voltage3 Reverse Recovery Time Reverse Recovery Charge VGS=0V , IS=1A , TJ=25℃ 3 3 AP80N03D

Max. --- --- 1 10 ±100 6 9 2.5 --- --- --- --- --- --- --- ns --- --- --- --- --- --- --- 80 320 1 --- --- Ω mJ A A V ns nC pF nC Unit V V/℃ uA uA nA mΩ mΩ V mV/℃ S Min. Typ. 30 --- --- --- --- --- --- 1 --- --- 0.04 --- --- --- 4.8 6.5 1.6 -4 18 11.1 1.85 6.8 7.5 14.5 35.2 9.6 1160 200 180 2.5 --- --- --- --- --- --- △BVDSS/△TJ BVDSS Temperature Coefficient VDS=10V , ID=10A --- --- VDS=15V , VGS=4.5V , ID=20A --- --- --- VDD=15V , VGS=10V , RG=3.3Ω ID=15A --- --- --- VDS=25V , VGS=0V , F=1MHz --- --- --- VGS=0V, VDS=0V, F=1MHz VDD=25V, L=0.1mH, IAS=20A --- 20 --- --- --- VGS=0V,IS=1A , di/dt=100A/µs TJ=25℃ --- --- AP80N03D Rve3.8 臺灣永源微電子科技有限公司

2

30V N-Channel Enhancement Mode MOSFET

AP80N03D

TC , Case Temperature ( )

F ig.1 Continuous Drain Current vs. Tc℃

, Junction Temperature ( )Fig. 3 J N Tormalized Vth ℃

vs. Tj

J Fig.5

Square Wave Pulse Duration (s)

Normalized Transient Impedance AP80N03D Rve3.8

T J , Junction Temperature ( ) Fig.2 Normalized RDSON vs. Tj ℃

Qg , Gate Charge (

)Fig. 4 Gate Charge WaveformnC

V , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DS

3 臺灣永源微電子科技有限公司

30V N-Channel Enhancement Mode MOSFET

VDS 90%

EAS= 1 BV DSS L x I AS2 x 2 BV - V DSS DD

AP80N03D

10%

VGS Td(on) Tr Td(off) Tf

Ton Toff F ig. 7 Switching Time Waveform

AP80N03D Rve3.8 BV DSS

V DD

I AS

V GS

F ig. 8 EAS Wavefo rm

4 臺灣永源微電子科技有限公司

30V N-Channel Enhancement Mode MOSFET

Package Mechanical Data

EB2AC2Ref.Min.AA2BB2CC2D2.1000.665.180.400.445.905.30REF6.404.634.479.501.091.357°0°6°0°4.6710.701.211.656.800.2520.1820.1760.3740.0430.0537°6°0.1840.4210.0480.065MillimetersTyp.Max.2.500.100.865.480.600.586.30Min.0.08300.0260.2020.0160.0170.2320.209REF0.268DimensionsInchesTyp.Max.0.0980.0040.0340.2160.0240.0230.248AP80N03D

V1LHDBGDETAIL ACD1EE1V1GHLD1A2V2V1E1L2DETAIL AL2V1V2TO-252

Reel Spectification-TO-252

DEB0P0P2Tt1DimensionsRef.Min.WEFD0D1P0P1P2A015.901.657.401.401.403.907.901.906.8510.452.680.240.1039.8040.0040.20MillimetersTyp.16.001.757.501.501.504.008.002.006.9010.502.78Max.16.101.857.601.601.604.108.102.107.0010.602.880.27Min.0.6260.0650.2910.0550.0550.1540.3110.0750.2700.4110.1050.0090.0041.5671.5751.583InchesTyp.0.6300.0690.2950.0590.0590.1570.3150.0790.2710.4130.109Max.0.6340.0730.2990.0630.0630.1610.3190.0830.2760.4170.1130.011FWAD1AB0A05°P1K0B29BB20AAΦ13Φ3B0K0Tt110P0

5

AP80N03D Rve3.8 臺灣永源微電子科技有限公司

30V N-Channel Enhancement Mode MOSFET

Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. AP80N03D

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the \"Delivery Specification\" for the APM Microelectronics product that you Intend to use.

AP80N03D Rve3.8 臺灣永源微電子科技有限公司

6