S-8241ABBMC-GBBT2G资料

2022-03-15 来源：步旅网

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Rev.7.6_00

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

The S-8241 Series is a series of lithium ion/lithium polymer rechargeable battery protection ICs incorporating high-accuracy voltage detection circuits and delay circuits.

These ICs are suitable for protection of 1-cell lithium ion/lithium polymer battery packs from overcharge, overdischarge and overcurrent.

󰂄 Features

(1) Internal high-accuracy voltage detection circuit

• Overcharge detection voltage: 3.9 to 4.4 V (5 mV-step) Accuracy of ±25 mV(+25 °C) and ± 30 mV(−5 to +55 °C)

• Overcharge release voltage: 3.8 to 4.4 V Accuracy of ±50 mV

• Overdischarge detection voltage: 2.0 to 3.0 V (100 mV-step) Accuracy of ±80 mV

• Overdischarge release voltage: 2.0 to 3.4 V Accuracy of ±100 mV • Overcurrent 1 detection voltage: 0.05 to 0.3 V (5 mV-step) Accuracy of ±20 mV • Overcurrent 2 detection voltage: 0.5 V (fixed) Accuracy of ±100 mV (2) A high voltage withstand device is used for charger connection pins

(VM and CO pins: Absolute maximum rating = 26 V)

(3) Delay times (overcharge: tCU; overdischarge: tDL; overcurrent 1: tlOV1; overcurrent 2: tlOV2) are generated

by an internal circuit. (External capacitors are unnecessary.) Accuracy of ±30%

(4) Internal three-step overcurrent detection circuit (overcurrent 1, overcurrent 2, and load short-circuiting) (5) Either the 0 V battery charging function or 0 V battery charge inhibiting function can be selected. (6) Products with and without a power-down function can be selected.

(7) Charger detection function and abnormal charge current detection function

• The overdischarge hysterisis is released by detecting a negative VM pin voltage (typ. −1.3 V) (Charger detection function).

• If the output voltage at DO pin is high and the VM pin voltage becomes equal to or lower than the charger detection voltage (typ. −1.3 V), the output voltage at CO pin goes low (Abnormal charge current detection function).

(8) Low current consumption

• Operation: 3.0 μA typ. 5.0 μA max. • Power-down mode: 0.1 μA max.

(9) Wide operating temperature range: −40 to +85 °C (10) Small package SOT-23-5, SNT-6A (11) Lead-free products *1. Overcharge release voltage = Overcharge detection voltage - Overcharge hysteresis

The overcharge hysteresis can be selected in the range 0.0, or 0.1 to 0.4 V in 50 mV steps. (However, selection “Overcharge release voltage<3.8 V” is enabled.)

*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis

The overdischarge hysteresis can be selected in the range 0.0 to 0.7 V in 100 mV steps. (However, selection “Overdischarge release voltage>3.4 V” is enabled.)

󰂄 Applications

• Lithium-ion rechargeable battery packs

• Lithium- polymer rechargeable battery packs

󰂄 Packages

Package name

Drawing code

Package Tape Reel Land SOT-23-5 MP005-A MP005-A MP005-A ⎯ SNT-6A PG006-A PG006-A PG006-A PG006-A

Seiko Instruments Inc. 1

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

Rev.7.6_00

󰂄 Block Diagram

Delay circuit Clock generation circuitVDD DO Load short-circuiting detection circuit Counter circuit − +Overcharge detection comparator Level conversion circuit 0V battery charging circuit 0V battery charge inhibition circuit CO RCOL Overdischarge detection comparator + − The overdischarge hysterisis is released when a charger is detected. Charger detection circuit RVMD +− Overcurrent 1 detection comparator RVMS VM +− Overcurrent 2 detection comparator VSS

Remark The diodes in the IC are parasitic diodes.

Figure 1

2 Seiko Instruments Inc.

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BATTERY PROTECTION IC FOR 1-CELL PACK

Rev.7.6_00

󰂄 Product Name Structure

1. Product Name

S-8241A xx xx - xxx xx G

IC direction in tape specifications*1

T2 : SOT-23-5 TF : SNT-6A

Product code*2

Package code MC : SOT-23-5 PG : SNT-6A

Serial code

Sequentially set from BA to ZZ

*1. Refer to the taping specifications. *2. Refer to the “2. Product Name List”.

Seiko Instruments Inc. S-8241 Series

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

2. Product Name List

(1) SOT-23-5

Table 1 (1/2)

Over- charge detection voltage VCU 4.275 V 4.280 V 4.350 V 4.275 V 4.295 V 4.325 V 4.200 V 4.325 V 4.280 V 4.325 V 4.320 V 4.350 V 4.350 V 4.280 V 4.325 V 4.300 V 4.200 V 4.295 V 4.280 V 4.350 V 4.220 V 4.280 V 4.300 V 4.275 V 4.295 V 4.295 V 4.295 V 4.280 V 4.350 V 4.350 V 4.200 V 4.350 V 4.100 V 4.325 V 4.275 V 4.350 V 4.180 V Over- charge release voltage VCL 4.075 V 3.980 V 4.100 V 4.175 V 4.095 V 4.075 V 4.100 V 4.125 V 4.080 V 4.075 V 4.070 V 4.150 V 4.150 V 4.080 V 4.075 V 4.100 V 4.100 V 4.095 V 4.080 V 4.000 V 4.220 V 4.080 V 4.100 V 4.075 V 4.095 V 4.095 V 4.095 V 4.080 V 4.150 V 4.150 V 4.200 V 4.150 V 3.850 V 4.075 V 4.175 V 4.150 V 3.930 V Over- discharge detection voltage VDL 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.50 V 2.30 V 2.30 V 2.30 V 2.50 V 2.50 V 2.30 V 2.30 V 2.30 V 2.50 V 2.30 V 2.30 V 2.30 V 2.30 V 2.60 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.60 V 2.05 V 2.00 V 2.50 V 2.10 V 2.50 V 2.50 V 2.30 V 2.30 V 2.50 V Over- discharge release voltage VDU 2.90 V 2.40 V 2.80 V 2.40 V 3.00 V 2.90 V 3.00 V 2.30 V 2.30 V 2.90 V 2.90 V 3.00 V 3.00 V 2.30 V 2.90 V 2.30 V 2.30 V 2.30 V 2.30 V 3.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.30 V 2.60 V 2.75 V 2.00 V 3.00 V 2.20 V 2.90 V 2.90 V 2.40 V 3.00 V 2.90 V Over- current 1 detection voltage VIOV1 0.100 V 0.125 V 0.075 V 0.100 V 0.200 V 0.100 V 0.100 V 0.100 V 0.160 V 0.150 V 0.100 V 0.150 V 0.200 V 0.130 V 0.100 V 0.100 V 0.150 V 0.130 V 0.130 V 0.200 V 0.200 V 0.200 V 0.150 V 0.100 V 0.080 V 0.090 V 0.060 V 0.200 V 0.200 V 0.200 V 0.100 V 0.200 V 0.150 V 0.150 V 0.100 V 0.100 V 0.150 V 0 V battery charging function Unavailable Available Unavailable Available Unavailable Unavailable Unavailable Available Unavailable Unavailable Unavailable Available Available Unavailable Unavailable Available Unavailable Available Unavailable Unavailable Available Available Available Unavailable Available Available Available Available Available Available Available Available Unavailable Unavailable Available Available Unavailable Delay time combi- nation*1 (1) (2) (1) (1) (1) (1) (1) (1) (1) (1) (1) (2) (2) (1) (4) (1) (1) (1) (3) (1) (3) (1) (1) (4) (1) (1) (1) (1) (2) (2) (1) (2) (1) (1) (1) (1) (1) Rev.7.6_00

Product Name / Item Power down function S-8241ABAMC-GBAT2G S-8241ABBMC-GBBT2G S-8241ABCMC-GBCT2G S-8241ABDMC-GBDT2G S-8241ABEMC-GBET2G S-8241ABFMC-GBFT2G S-8241ABGMC-GBGT2G S-8241ABHMC-GBHT2G S-8241ABIMC-GBIT2G S-8241ABKMC-GBKT2G S-8241ABLMC-GBLT2G S-8241ABOMC-GBOT2G S-8241ABPMC-GBPT2G S-8241ABQMC-GBQT2G S-8241ABRMC-GBRT2G S-8241ABTMC-GBTT2G S-8241ABUMC-GBUT2G S-8241ABVMC-GBVT2G S-8241ABWMC-GBWT2G S-8241ABXMC-GBXT2G S-8241ABYMC-GBYT2G S-8241ACAMC-GCAT2G S-8241ACBMC-GCBT2G S-8241ACDMC-GCDT2G S-8241ACEMC-GCET2G S-8241ACFMC-GCFT2G S-8241ACGMC-GCGT2G S-8241ACHMC-GCHT2G S-8241ACIMC-GCIT2G S-8241ACKMC-GCKT2G S-8241ACLMC-GCLT2G S-8241ACNMC-GCNT2G S-8241ACOMC-GCOT2G S-8241ACPMC-GCPT2G S-8241ACQMC-GCQT2G S-8241ACRMC-GCRT2G S-8241ACSMC-GCST2G Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes No No No No No

4 Seiko Instruments Inc.

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Rev.7.6_00

Table 1 (2/2)

Over- charge detection voltage VCU 4.100 V 4.180 V 4.275 V 4.275 V 4.350 V 4.185 V 4.350 V 4.350 V 4.275 V 4.220 V 4.230 V 4.250 V 4.275 V 4.250 V 4.180 V Over- charge release voltage VCL 4.000 V 4.080 V 4.075 V 4.075 V 4.150 V 4.085 V 4.150 V 4.150 V 4.075 V 4.070 V 4.080 V 4.100 V 4.175 V 4.100 V 4.180 V Over- discharge detection voltage VDL 2.50 V 2.50 V 2.50 V 2.60 V 2.30 V 2.80 V 2.10 V 2.10 V 2.10 V 2.70 V 2.70 V 2.70 V 2.30 V 2.00 V 2.50 V Over- discharge release voltage VDU 2.90 V 2.90 V 2.90 V 2.90 V 3.00 V 2.90 V 2.20 V 2.10 V 2.10 V 3.00 V 3.00 V 3.00 V 2.40 V 2.70 V 3.00 V Over- current 1 detection voltage VIOV1 0.150 V 0.150 V 0.150 V 0.100 V 0.100 V 0.150 V 0.150 V 0.150 V 0.150 V 0.300 V 0.300 V 0.300 V 0.100 V 0.150 V 0.100 V 0 V battery charging function Unavailable Unavailable Unavailable Unavailable Available Unavailable Available Unavailable Unavailable Available Available Available Unavailable Available Available Delay time combi- nation*1 (1) (1) (1) (1) (1) (1) (2) (5) (5) (1) (1) (1) (1) (1) (1) BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

Product Name / Item Power down function S-8241ACTMC-GCTT2G S-8241ACUMC-GCUT2G S-8241ACXMC-GCXT2G S-8241ACYMC-GCYT2G S-8241ADAMC-GDAT2G S-8241ADDMC-GDDT2G S-8241ADEMC-GDET2G S-8241ADFMC-GDFT2G S-8241ADGMC-GDGT2G S-8241ADLMC-GDLT2G S-8241ADMMC-GDMT2G S-8241ADNMC-GDNT2G S-8241ADOMC-GDOT2G S-8241ADQMC-GDQT2G S-8241ADTMC-GDTT2G No No No No Yes Yes Yes Yes Yes Yes Yes Yes No Yes Yes S-8241ADVMC-GDVT2G 3.900 V 3.900 V 2.00 V 2.30 V 0.150 V Available (1) Yes *1. Refer to the Table 3 about the details of the delay time combinations (1) to (5).

Remark Please contact our sales office for the products with detection voltage value other than those specified above.

Seiko Instruments Inc. 5

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

Rev.7.6_00

(2) SNT-6A

Table 2

Over- charge detection voltage VCU 4.275 V 4.350 V 4.275 V 4.350 V 4.350 V Over- charge release voltage VCL 4.175 V 4.150 V 4.075 V 4.150 V 4.150 V Over- discharge detection voltage VDL 2.30 V 2.35 V 2.30 V 2.70 V 2.10 V Over- discharge release voltage VDU 2.40 V 2.65 V 2.40 V 2.70 V 2.10 V Over- current 1 detection voltage VIOV1 0.100 V 0.200 V 0.140 V 0.200 V 0.150 V 0 V battery charging function Available Available Available Unavailable Unavailable Delay time combi- nation*1 (1) (2) (1) (2) (5) Product Name / Item Power down function S-8241ABDPG-KBDTFG S-8241ABSPG-KBSTFG S-8241ABZPG-KBZTFG S-8241ACZPG-KCZTFG S-8241ADFPG-KDFTFG Yes Yes Yes Yes Yes S-8241ADHPG-KDHTFG 4.250 V 4.050 V 2.40 V 2.90 V 0.100 V Available (1) No *1. Refer to the Table 3 about the details of the delay time combinations (1) to (5).

Remark Please contact our sales office for the products with detection voltage value other than those specified above.

6 Seiko Instruments Inc.

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Rev.7.6_00

Table 3

Delay time combination

(1) (2) (3) (4) (5)

Overcharge detection

delay time

tCU 1.0 s 0.125 s

0.25 s 2.0 s 0.25 s

Overdischarge detection

delay time

tDL 125 ms 31 ms

125 ms 125 ms 31 ms

Overcurrent 1 detection

delay time tlOV1 8 ms 16 ms

8 ms 8 ms 16 ms

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

Remark The delay times can be changed within the range listed Table 4. For details, please contact our sales office.

Table 4

Delay time

Symbol

Selection range

Remarks

Select a value from the left.Select a value from the left.Select a value from the left.

Overcharge detection delay time tCU 0.25 s 0.5 s 1.0 s 2.0 s Overdischarge detection delay time tDL 31 ms 62.5 ms 125 ms ⎯ Overcurrent 1 detection delay time tlOV1 4 ms 8 ms 16 ms ⎯ Remark The value surrounded by bold lines is the delay time of the standard products.

Seiko Instruments Inc. 7

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

Rev.7.6_00

󰂄 Pin Configurations

SOT-23-5 Top view Pin No.

Symbol

Table 5

Description

5 4

Voltage detection pin between VM and VSS

1 3 2 Figure 2 SNT-6A Top view Pin 1 6 1 NC2 5 2 3 4 3 Figure 3 6 8 1 VM (Overcurrent detection pin) 2 VDD Positive power input pin 3 VSS Negative power input pin 4 DO FET gate connection pin for discharge control

(CMOS output)

5 CO FET gate connection pin for charge control

(CMOS output)

Table 6 No. Symbol Description *1

No connection CO FET gate connection pin for charge control (CMOS output) DO FET gate connection pin for discharge control (CMOS output) 4 VSS Negative power input pin 5 VDD Positive power input pin VM Voltage detection pin between VM and VSS (Overcurrent detection pin) *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. Seiko Instruments Inc.

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Rev.7.6_00

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

󰂄 Absolute Maximum Ratings

Table 7

(Ta = 25 °C unless otherwise specified)

Item Symbol Applicable pin Rating Unit Input voltage between VDD and VSS VDS VDD VSS −0.3 to VSS +12 V VM input pin voltage VVM VM VDD −26 to VDD +0.3 V CO output pin voltage VCO CO VVM −0.3 to VDD +0.3 V DO output pin voltage VDO DO VSS −0.3 to VDD +0.3 V

250 (When not mounted on board) mW

SOT-23-5 *1

Power dissipation PD ⎯ 600 mW

*1400 mW SNT-6A

Operation ambient temperature Topr ⎯ −40 to +85 °C Storage temperature Tstg *1. When mounted on board

[Mounted board]

(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7

Caution

The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions.

⎯

−40 to +125

°C

Power Disspation (PD) [mW]

7006005004003002001000010015050Ambient Temperature(Ta) [°C]SOT-23-5SNT-6A

Figure 4 Power Dissipation of Package (When Mounted on Board)

Seiko Instruments Inc. 9

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

Rev.7.6_00

󰂄 Electrical Characteristics

1. Other than detection delay time (25 °C)

Table 8

(Ta = 25 °C unless otherwise specified) Test Test Item Symbol Condition Min. Typ.Max. Unit ConditionCircuit DETECTION VOLTAGE VCU-0.025 VCU VCU+0.025 ⎯ Overcharge detection voltage VCU V 1 1 *1VCU = 3.9 to 4.4 V, 5 mV Step VCU-0.030 VCU VCU+0.030 Ta = -5 to +55 °C Overcharge release voltage VCL-0.050 VCL VCL+0.050 When VCL ≠ VCU VCL V 1 1 VCU−VCL = 0 to 0.4 V, 50 mV Step When VCL = VCU VCL-0.025 VCL VCL+0.025 Overdischarge detection voltage VDL VDL-0.080 VDL VDL+0.080 V 1 1 ⎯ VDL = 2.0 to 3.0 V, 100 mV Step Overdischarge release voltage VDU-0.100 VDU VDU+0.100 When VDU ≠ VDL VDU V 1 1 VDU−VDL = 0 to 0.7 V, 100 mV Step When VDU = VDL VDU-0.080 VDU VDU+0.080 Overcurrent 1 detection voltage VIOV1 VIOV1-0.020 VIOV1 VIOV1+0.020 V 2 1 ⎯ VIOV1 = 0.05 to 0.3V, 5 mV Step Overcurrent 2 detection voltage VIOV2 0.4 0.5 0.6 V 2 1 ⎯ Load short-circuiting detection VSHORT VM voltage based on VDD -1.7 -1.3 -0.9 V 2 1 voltage Charger detection voltage VCHA -2.0 -1.3 -0.6 V 3 1 ⎯ Overcharge detection voltage TCOE1 Ta = -5 to +55 °C -0.5 0 0.5 mV/°C ⎯ ⎯ temperature factor *1 Overcurrent 1 detection voltage TCOE2 Ta = -5 to +55 °C -0.1 0 0.1 mV/°C ⎯ ⎯ *1temperature factor INPUT VOLTAGE, OPERATING VOLTAGE Input voltage between VDD and VDS1 absolute maximum rating -0.3 12 V ⎯ ⎯ ⎯ VSS Input voltage between VDD and VDS2 absolute maximum rating -0.3 26 V ⎯ ⎯ ⎯ VM Operating voltage between VDD 8 VDSOP1 Internal circuit operating voltage 1.5 V ⎯ ⎯ ⎯ and VSS Operating voltage between VDD VDSOP2 Internal circuit operating voltage 1.5 24 V ⎯ ⎯ ⎯ and VM CURRENT CONSUMPTION Power-down function available Current consumption during IOPE VDD = 3.5 V, VVM = 0 V 1.0 3.0 5.0 μA 4 1 normal operation Current consumption at power IPDN VDD = VVM = 1.5 V 0.1 4 1 ⎯ ⎯ μA down CURRENT CONSUMPTION Power-down function unavailable Current consumption during IOPE VDD = 3.5 V, VVM = 0 V 1.0 3.0 5.0 μA 4 1 normal operation Overdischarge current 4 1 IOPED VDD = VVM = 1.5 V 1.0 2.0 3.5 μA consumption OUTPUT RESISTANCE CO pin H resistance RCOH VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V 0.1 2 10 6 1 kΩ CO pin L resistance RCOL VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V 150 600 2400 6 1 kΩ DO pin H resistance RDOH VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 0.1 1.3 6.0 7 1 kΩ DO pin L resistance RDOL VDO = 0.5 V, VDD = VVM = 1.8 V 0.1 0.5 2.0 7 1 kΩ VM INTERNAL RESISTANCE Internal resistance between VM RVMD VDD = 1.8 V, VVM = 0 V 100 300 900 5 1 kΩ and VDD Internal resistance between VM RVMS VDD = VVM = 3.5 V 50 100 150 5 1 kΩ and VSS 0 V BATTERY CHARGING FUNCTION The 0 V battery function is either \"0 V battery charging function\" or \"0 V battery charge inhibiting function\" depending upon the product type. 0 V battery charge starting charger V0CHA 0 V battery charging Available 0.0 0.8 1.5 V 10 1 voltage 0 V battery charge inhibiting V0INH 0 V battery charging Unavailable 0.6 0.9 1.2 V 11 1 battery voltage *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 10 Seiko Instruments Inc.

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Rev.7.6_00

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

2. Other than detection delay time (-40 to +85 °C*1)

Table 9

Item Symbol Condition (Ta = -40 to +85 °C*1 unless otherwise specified) Test Test Min. Typ. Max. Unit ConditionCircuit DETECTION VOLTAGE Overcharge detection voltage VCU VCU-0.055 VCU VCU+0.040 V 1 1 ⎯ VCU = 3.9 to 4.4 V, 5 mV Step Overcharge release voltage VCL-0.095 VCL VCL+0.060 When VCL ≠ VCU VCL V 1 1 VCU −VCL = 0 to 0.4 V, 50 mV Step When VCL = VCU VCL-0.055 VCL VCL+0.040 Overdischarge detection voltage VDL VDL-0.120 VDL VDL+0.120 V 1 1 ⎯ VDL = 2.0 to 3.0 V, 100 mV Step Overdischarge release voltage VDU-0.140 VDU VDU+0.140 When VDU ≠ VDL VDU V 1 1 VDU−VDL = 0 to 0.7 V, 100 mV Step When VDU = VDL VDU-0.120 VDU VDU+0.120 Overcurrent 1 detection voltage VIOV1 VIOV1-0.026 VIOV1 VIOV1+0.026 V 2 1 ⎯ VIOV1 = 0.05 to 0.3V, 5 mV Step Overcurrent 2 detection voltage VIOV2 0.37 0.5 0.63 V 2 1 ⎯ Load short-circuiting detection VSHORT VM voltage based on VDD -1.9 -1.3 -0.7 V 2 1 voltage Charger detection voltage VCHA -2.2 -1.3 -0.4 V 3 1 ⎯ Overcharge detection voltage TCOE1 Ta = -40 to +85 °C -0.7 0 0.7 mV/°C ⎯ ⎯ temperature factor *1 Overcurrent 1 detection voltage TCOE2 Ta = -40 to +85 °C -0.2 0 0.2 mV/°C ⎯ ⎯ temperature factor *1 INPUT VOLTAGE, OPERATING VOLTAGE Input voltage between VDD and VDS1 absolute maximum rating -0.3 12 V ⎯ ⎯ ⎯ VSS Input voltage between VDD and VDS2 absolute maximum rating -0.3 V 26 ⎯ ⎯ ⎯ VM Operating voltage between VDD VDSOP1 Internal circuit operating voltage 1.5 8 V ⎯ ⎯ ⎯ and VSS Operating voltage between VDD VDSOP2 Internal circuit operating voltage 1.5 24 V ⎯ ⎯ ⎯ and VM CURRENT CONSUMPTION Power-down function available Current consumption during IOPE VDD = 3.5 V, VVM = 0 V 0.7 3.0 6.0 μA 4 1 normal operation Current consumption at power IPDN VDD = VVM = 1.5 V 0.1 4 1 ⎯ ⎯ μA down CURRENT CONSUMPTION Power-down function unavailable Current consumption during 4 1 IOPE VDD = 3.5 V, VVM = 0 V 0.7 3.0 6.0 μA normal operation Overdischarge current 4 1 IOPED VDD = VVM = 1.5 V 0.6 2.0 4.5 μA consumption OUTPUT RESISTANCE 6 1 CO pin H resistance RCOH VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V 0.07 2 13 kΩ CO pin L resistance RCOL VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V 100 600 3500 6 1 kΩ DO pin H resistance RDOH VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 0.07 1.3 7.3 7 1 kΩ 7 1 DO pin L resistance RDOL VDO = 0.5 V, VDD = VVM = 1.8 V 0.07 0.5 2.5 kΩ VM INTERNAL RESISTANCE Internal resistance between VM RVMD VDD = 1.8 V, VVM = 0 V 78 300 1310 kΩ 5 1 and VDD Internal resistance between VM RVMS VDD = VVM = 3.5 V 39 100 220 kΩ 5 1 and VSS 0 V BATTERY CHARGING FUNCTION The 0 V battery function is either \"0 V battery charging function\" or \"0 V battery charge inhibiting function\" depending upon the product type. 0 V battery charge starting charger V0CHA 0 V battery charging Available 0.0 0.8 1.7 V 10 1 voltage 0 V battery charge inhibiting V0INH 0 V battery charging Unavailable 0.4 0.9 1.4 V 11 1 battery voltage *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. Seiko Instruments Inc. 11

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

Rev.7.6_00

3 Detection delay time

(1) S-8241ABA, S-8241ABC, S-8241ABD, S-8241ABE, S-8241ABF, S-8241ABG, S-8241ABH,

S-8241ABI, S-8241ABK, S-8241ABL, S-8241ABQ, S-8241ABT, S-8241ABU, S-8241ABV, S-8241ABX, S-8241ABZ, S-8241ACA, S-8241ACB, S-8241ACE, S-8241ACF, S-8241ACG, S-8241ACH, S-8241ACL, S-8241ACO, S-8241ACP, S-8241ACQ, S-8241ACR, S-8241ACS, S-8241ACT, S-8241ACU, S-8241ACX, S-8241ACY, S-8241ADA, S-8241ADD, S-8241ADH, S-8241ADL, S-8241ADM, S-8241ADN, S-8241ADO, S-8241ADQ, S-8241ADT, S-8241ADV

Table 10

tCU tDL tlOV1 tlOV2 tSHORT tCU tDL tIOV1 tIOV2 tSHORT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.7 1.0 1.3 s 87.5 125 162.5 ms 8 8 1 1 5.6 8 10.4 ms 9 1 1.4 2 2.6 ms 9 1 ⎯ 10 50 μs 9 1 8 8 1 1 0.55 1.0 1.7 s 69 125 212 ms 4.4 8 14 ms 9 1 1.1 2 3.4 ms 9 1 ⎯ 10 73 μs 9 1 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by

design, not tested in production.

(2) S-8241ABB, S-8241ABO, S-8241ABP, S-8241ABS, S-8241ACI, S-8241ACK, S-8241ACN,

S-8241ACZ, S-8241ADE

Table 11

Test TestItem Symbol Condition Min. Typ. Max. Unit ConditionCircuitDELAY TIME (Ta = 25 °C) Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time DELAY TIME (Ta = −40 to +85 °C) *1 Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time tCU tDL tlOV1 tlOV2 tSHORT tCU tDL tIOV1 tIOV2 tSHORT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 87.5 125 162.5 ms 8 1 21 31 41 ms 8 1 11 16 21 ms 9 1 1.4 2 2.6 ms 9 1 ⎯ 10 50 μs 9 1 8 1 69 125 212 ms 17 31 53 ms 8 1 9 16 27 ms 9 1 1.1 2 3.4 ms 9 1 ⎯ 10 73 μs 9 1 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by

design, not tested in production.

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(3) S-8241ABW, S-8241ABY

Table 12

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

tCU tDL tlOV1 tlOV2 tSHORT tCU tDL tIOV1 tIOV2 tSHORT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.175 0.25 0.325 s 87.5 125 162.5 ms 8 8 1 1 5.6 8 10.4 ms 9 1 1.4 2 2.6 ms 9 1 ⎯ 10 50 μs 9 1 8 8 1 1 0.138 0.25 0.425 s 69 125 212 ms 4.4 8 14 ms 9 1 1.1 2 3.4 ms 9 1 ⎯ 10 73 μs 9 1 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by

design, not tested in production.

(4) S-8241ABR, S-8241ACD

Table 13

tCU tDL tlOV1 tlOV2 tSHORT tCU tDL tIOV1 tIOV2 tSHORT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.4 2.0 2.6 s 87.5 125 162.5 ms 8 1 8 1 5.6 8 10.4 ms 9 1 1.4 2 2.6 ms 9 1 ⎯ 10 50 μs 1.1 2.0 3.4 s 69 125 212 ms 9 1 8 8 1 1 4.4 8 14 ms 9 1 1.1 2 3.4 ms 9 1 ⎯ 10 73 μs 9 1 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by

design, not tested in production.

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

(5) S-8241ADF, S-8241ADG

Table 14

Test TestItem Symbol Condition Min. Typ. Max. Unit ConditionCircuitDELAY TIME (Ta = 25 °C) Overcharge detection delay time tCU ⎯ 0.175 0.25 0.325 ms 8 1 Overdischarge detection delay time tDL ⎯ 21 31 41 ms 8 1 Overcurrent 1 detection delay time tlOV1 ⎯ 11 16 21 ms 9 1 Overcurrent 2 detection delay time tlOV2 ⎯ 1.4 2 2.6 ms 9 1 Load short-circuiting detection delay time tSHORT ⎯ ⎯ 10 50 μs 9 1 DELAY TIME (Ta = −40 to +85 °C) *1 Overcharge detection delay time tCU ⎯ 0.138 0.25 0.425 s 8 1 Overdischarge detection delay time tDL ⎯ 17 31 53 ms 8 1 Overcurrent 1 detection delay time tIOV1 ⎯ 9 16 27 ms 9 1 Overcurrent 2 detection delay time tIOV2 ⎯ 1.1 2 3.4 ms 9 1 Load short-circuiting detection delay time tSHORT ⎯ ⎯ 10 73 μs 9 1 *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by

design, not tested in production.

Rev.7.6_00

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Rev.7.6_00

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

󰂄 Test Circuits

Caution Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (VCO) and DO pin (VDO) are

judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to VVM and the DO pin level with respect to VSS.

(1) Test Condition 1, Test Circuit 1

(Overcharge detection voltage, Overcharge release voltage, Overdischarge detection voltage, Overdischarge release voltage) The overcharge detection voltage (VCU) is defined by the voltage between VDD and VSS at which VCO goes “L” from “H” when the voltage V1 is gradually increased from the normal condition V1 = 3.5 V and V2 = 0 V. The overcharge release voltage (VCL) is defined by the voltage between VDD and VSS at which VCO goes “H” from “L” when the voltage V1 is then gradually decreased.

Gradually decreasing the voltage V1, the overdischarge detection voltage (VDL) is defined by the voltage between VDD and VSS at which VDO goes “L” from “H”. The overdischarge release voltage (VDU) is defined by the voltage between VDD and VSS at which VDO goes “H” from “L” when the voltage V1 is then gradually increased.

(2) Test Condition 2, Test Circuit 1

(Overcurrent 1 detection voltage, Overcurrent 2 detection voltage, Load short-circuiting detection voltage)

The overcurrent 1 detection voltage (VIOV1) is defined by the voltage between VDD and VSS at which VDO goes “L” from “H” when the voltage V2 is gradually increased from the normal condition V1 = 3.5 V and V2 = 0 V.

The overcurrent 2 detection voltage (VIOV2) is defined by the voltage between VDD and VSS at which VDO goes “L” from “H” when the voltage V2 is increased at the speed between 1 ms and 4 ms from the normal condition V1 = 3.5 V and V2 = 0 V.

The load short-circuiting detection voltage (VSHORT) is defined by the voltage between VDD and VSS at which VDO goes “L” from “H” when the voltage V2 is increased at the speed between 1 μs and 50 μs from the normal condition V1 = 3.5 V and V2 = 0 V.

(3) Test Condition 3, Test Circuit 1

(Charger detection voltage, ( = abnormal charge current detection voltage) )

• Applied only for products with overdischarge hysteresis

Set V1 = 1.8 V and V2 = 0 V under overdischarge condition. Increase V1 gradually, set V1 = (VDU+VDL) / 2 (within overdischarge hysteresis, overdischarge condition), then decrease V2 from 0 V gradually. The voltage between VM and VSS at which VDO goes “H” from “L” is the charger detection voltage (VCHA). • Applied only for products without overdischarge hysteresis

Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V2 from 0 V gradually. The voltage between VM and VSS at which VCO goes “L” from “H” is the abnormal charge current detection voltage. The abnormal charge current detection voltage has the same value as the charger detection voltage (VCHA).

(4) Test Condition 4, Test Circuit 1

(Normal operation current consumption, Power-down current consumption, Overdischarge current consumption)

Set V1 = 3.5 V and V2 = 0 V under normal condition. The current IDD flowing through VDD pin is the normal operation consumption current (IOPE).

• For products with power-down function

Set V1 = V2 = 1.5 V under overdischarge condition. The current IDD flowing through VDD pin is the power-down current consumption (IPDN).

• For products without power-down function

Set V1 = V2 = 1.5 V under overdischarge condition. The current IDD flowing through VDD pin is the overdischarge current consumption (IOPED).

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(5) Test Condition 5, Test Circuit 1

(Internal resistance between VM and VDD, Internal resistance between VM and VSS)

Set V1 = 1.8 V and V2 = 0 V under overdischarge condition. Measure current IVM flowing through VM pin. 1.8V / |IVM| gives the internal resistance (RVMD) between VM and VDD.

Set V1 = V2 = 3.5 V under overcurrent condition. Measure current IVM flowing through VM pin. 3.5 V / |IVM| gives the internal resistance (RVMS) between VM and VSS.

(6) Test Condition 6, Test Circuit 1

(CO pin H resistance, CO pin L resistance) Set V1 = 3.5 V, V2 = 0 V and V3 = 3.0 V under normal condition. Measure current ICO flowing through CO pin. 0.5 V / |ICO| is the CO pin H resistance (RCOH).

Set V1 = 4.5 V, V2 = 0 V and V3 = 0.5 V under overcharge condition. Measure current ICO flowing through CO pin. 0.5 V / |ICO| is the CO pin L resistance (RCOL).

(7) Test Condition 7, Test Circuit 1

(DO pin H resistance, DO pin L resistance) Set V1 = 3.5 V, V2 = 0 V and V4 = 3.0 V under normal condition. Measure current IDO flowing through DO pin. 0.5 V / |IDO| gives the DO pin H resistance (RDOH).

Set V1 = 1.8 V, V2 = 0 V and V4 = 0.5 V under overdischarge condition. Measure current IDO flowing through DO pin. 0.5 V / |IDO| gives the DO pin L resistance (RDOL).

(8) Test Condition 8, Test Circuit 1

(Overcharge detection delay time, Overdischarge detection delay time)

Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V1 gradually to overcharge detection voltage VCU - 0.2 V and increase V1 to the overcharge detection voltage VCU + 0.2 V momentarily (within 10 μs). The time after V1 becomes the overcharge detection voltage until VCO goes \"L\" is the overcharge detection delay time (tCU).

Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V1 gradually to overdischarge detection voltage VDL + 0.2 V and decrease V1 to the overdischarge detection voltage VDL - 0.2 V momentarily (within 10 μs). The time after V1 becomes the overdischarge detection voltage VDL until VDO goes \"L\" is the overdischarge detection delay time (tDL).

(9) Test Condition 9, Test Circuit 1

(Overcurrent 1 detection delay time, Overcurrent 2 detection delay time, Load short-circuiting detection delay time, Abnormal charge current detection delay time)

Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.35 V momentarily (within 10 μs). The time after V2 becomes overcurrent 1 detection voltage (VIOV1) until VDO goes \"L\" is overcurrent 1 detection delay time (tIOV1).

Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.7 V momentarily (within 1 μs). The time after V2 becomes overcurrent 1 detection voltage (VIOV1) until VDO goes \"L\" is overcurrent 2 detection delay time (tIOV2).

Caution The overcurrent 2 detection delay time starts when the overcurrent 1 is detected, since the delay

circuit is common.

Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 3.0 V momentarily (within 1 μs). The time after V2 becomes the load short-circuiting detection voltage (VSHORT) until VDO goes \"L\" is the load short-circuiting detection delay time (tSHORT).

Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V2 from 0 V to -2.5 V momentarily (within 10 μs). The time after V2 becomes the charger detection voltage (VCHA) until VCO goes \"L\" is the abnormal charge current detection delay time. The abnormal charge current detection delay time has the same value as the overcharge detection delay time.

Rev.7.6_00

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Rev.7.6_00

(10) Test Condition 10, Test Circuit 1 (Product with 0 V battery charging function) (0 V battery charge start charger voltage)

Set V1 = V2 = 0 V and decrease V2 gradually. The voltage between VDD and VM at which VCO goes “H” (VVM + 0.1 V or higher) is the 0 V battery charge start charger voltage (V0CHA).

(11) Test Condition 11, Test Circuit 1 (Product with 0 V battery charge inhibiting function) (0 V battery charge inhibiting battery voltage)

Set V1 = 0 V and V2 = -4 V. Increase V1 gradually. The voltage between VDD and VSS at which VCO goes “H” (VVM + 0.1 V or higher) is the 0 V battery charge inhibiting battery voltage (V0INH).

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

IDD A V1 VDD S-8241 Series VM VSS DO CO A IVM

IDO A A ICO V V V DOCOV V4 V3 COM Test circuit 1

Figure 5

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

Rev.7.6_00

󰂄 Operation

Remark Refer to the “󰂄 Battery Protection IC Connection Example”.

1. Normal Condition

The S-8241 monitors the voltage of the battery connected to VDD and VSS pins and the voltage difference between VM and VSS pins to control charging and discharging. When the battery voltage is in the range from the overdischarge detection voltage (VDL) to the overcharge detection voltage (VCU), and the VM pin voltage is in the range from the

charger detection voltage (VCHA) to the overcurrent 1 detection voltage (VIOV1) (the current flowing through the battery is equal to or lower than a specified value), the IC turns both the charging and discharging control FETs on. This condition is called normal condition and in this condition charging and discharging can be carried out freely.

2. Overcurrent Condition

When the discharging current becomes equal to or higher than a specified value (the VM pin voltage is equal to or higher than the overcurrent detection voltage) during discharging under normal condition and the state continues for the overcurrent detection delay time or longer, the S-8241 turns the discharging control FET off to stop discharging. This condition is called overcurrent condition. (The overcurrent includes overcurrent 1, overcurrent 2, or load short-circuiting.)

The VM and VSS pins are shorted internally by the RVMS resistor under the overcurrent condition. When a load is connected, the VM pin voltage equals the VDD voltage due to the load.

The overcurrent condition returns to the normal condition when the load is released and the impedance between the EB+ and EB- pins (see the Figure 12 for a connection example) becomes higher than the automatic recoverable

impedance (see the equation [1] below). When the load is removed, the VM pin goes back to the VSS potential since the VM pin is shorted the VSS pin with the RVMS resistor. Detecting that the VM pin potential is lower than the overcurrent 1 detection voltage (VIOV1), the IC returns to the normal condition.

Automatic recoverable impedance = {Battery voltage / (Minimum value of overcurrent 1 detection voltage) − 1} x (RVMS maximum value) --- [1]

Example: Battery voltage = 3.5 V and overcurrent 1 detection voltage (VIOV1) = 0.1 V

Automatic recoverable impedance = (3.5 V / 0.07 V −1) x 200 kΩ = 9.8 MΩ

Remark The automatic recoverable impedance varies with the battery voltage and overcurrent 1 detection voltage

settings. Determine the minimum value of the open load using the above equation [1] to have automatic recovery from the overcurrent condition work after checking the overcurrent 1 detection voltage setting for the IC.

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Rev.7.6_00

3. Overcharge Condition

When the battery voltage becomes higher than the overcharge detection voltage (VCU) during charging under normal condition and the state continues for the overcharge detection delay time (tCU) or longer, the S-8241 turns the charging control FET off to stop charging. This condition is called the overcharge condition.

The overcharge condition is released in the following two cases ((1) and (2)) depending on the products with and without overcharge hysteresis:

Products with overcharge hysteresis (overcharge detection voltage (VCU) > overcharge release voltage (VCL)) (1) When the battery voltage drops below the overcharge release voltage (VCL), the S-8241 turns the charging control

FET on and returns to the normal condition.

(2) When a load is connected and discharging starts, the S-8241 turns the charging control FET on and returns to the

normal condition. The release mechanism is as follows: the discharging current flows through an internal parasitic diode of the charging FET immediately after a load is connected and discharging starts, and the VM pin voltage increases about 0.7 V (Vf voltage of the diode) from the VSS pin voltage momentarily. The IC detects this voltage (being higher than the overcurrent 1 detection voltage) and releases the overcharge condition. Consequently, in the case that the battery voltage is equal to or lower than the overcharge detection voltage (VCU), the IC returns to the normal condition immediately, but in the case the battery voltage is higher than the overcharge detection voltage (VCU), the IC does not return to the normal condition until the battery voltage drops below the overcharge detection voltage (VCU) even if the load is connected. In addition if the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is connected and discharging starts, the IC does not return to the normal condition.

Remark If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery

voltage does not drop below the overcharge detection voltage (VCU) even when a heavy load, which causes an overcurrent, is connected, the overcurrent 1 and overcurrent 2 do not work until the battery voltage drops below the overcharge detection voltage (VCU). Since an actual battery has, however, an internal impedance of several dozens of mΩ, and the battery voltage drops immediately after a heavy load which causes an overcurrent is connected, the overcurrent 1 and overcurrent 2 work. Detection of load short-circuiting works regardless of the battery voltage.

Products without overcharge hysteresis (Overcharge detection voltage (VCU) = Overcharge release voltage (VCL)) (1) When the battery voltage drops below the overcharge release voltage (VCL), the S-8241 turn the charging control FET on and returns to the normal condition.

(2) When a load is connected and discharging starts, the S-8241 turns the charging control FET on and returns to the normal condition. The release mechanism is explained as follows : the discharging current flows through an internal parasitic diode of the charging FET immediately after a load is connected and discharging starts, and the VM pin voltage increases about 0.7 V (Vf voltage of the diode) from the VSS pin voltage momentarily. Detecting this voltage (being higher than the overcurrent 1 detection voltage), the IC increases the overcharge detection voltage about 50 mV, and releases the overcharge condition. Consequently, when the battery voltage is equal to or lower than the overcharge detection voltage (VCU) + 50 mV, the S-8241 immediately returns to the normal condition. But the battery voltage is higher than the overcharge detection voltage (VCU) + 50 mV, the S-8241 does not return to the normal condition until the battery voltage drops below the overcharge detection voltage (VCU) + 50 mV even if a load is connected. If the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is connected and discharging starts, the S-8241 does not return to the normal condition.

Remark If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery

voltage does not drop below the overcharge detection voltage (VCU) + 50 mV even when a heavy load, which causes an overcurrent, is connected, the overcurrent 1 and overcurrent 2 do not work until the battery voltage drops bellow the overcharge detection voltage (VCU) + 50 mV. Since an actual battery has, however, an internal impedance of several dozens of mΩ, and the battery voltage drops immediately after a heavy load which causes an overcurrent is connected, the overcurrent 1 and overcurrent 2 work. Detection of load short-circuiting works regardless of the battery voltage.

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

4. Overdischarge Condition

With power-down function

When the battery voltage drops below the overdischarge detection voltage (VDL) during discharging under normal condition and it continues for the overdischarge detection delay time (tDL) or longer, the S-8241 turns the discharging control FET off and stops discharging. This condition is called overdischarge condition. After the discharging control FET is turned off, the VM pin is pulled up by the RVMD resistor between VM and VDD in the IC. Meanwhile the potential difference between VM and VDD drops below 1.3 V (typ.) (the load short-circuiting detection voltage), current consumption of the IC is reduced to the power-down current consumption (IPDN). This condition is called power-down condition. The VM and VDD pins are shorted by the RVMD resistor in the IC under the overdischarge and power-down conditions.

The power-down condition is released when a charger is connected and the potential difference between VM and VDD becomes 1.3 V (typ.) or higher (load short-circuiting detection voltage). At this time, the FET is still off. When the battery voltage becomes the overdischarge detection voltage (VDL) or higher*1, the S-8241 turns the FET on and changes to the normal condition from the overdischarge condition.

*1. If the VM pin voltage is no less than the charger detection voltage (VCHA), when the battery under overdischarge

condition is connected to a charger, the overdischarge condition is released (the discharging control FET is turned on) as usual, provided that the battery voltage reaches the overdischarge release voltage (VDU) or higher.

Without power-down function

When the battery voltage drops below the overdischarge detection voltage (VDL) during discharging under normal condition and it continues for the overdischarge detection delay time (tDL) or longer, the S-8241 turns the discharging control FET off and stops discharging. When the discharging control FET is turned off, the VM pin is pulled up by the RVMD resistor between VM and VDD in the IC. Meanwhile the potential difference between VM and VDD drops below 1.3 V (typ.) (the load short-circuiting detection voltage), current consumption of the IC is reduced to the overdischarge current consumption (IOPED). This condition is called overdischarge condition. The VM and VDD pins are shorted by the RVMD resistor in the IC under the overdischarge condition.

When a charger is connected, the overdischarge condition is released in the same way as explained above in respect to products having the power-down function. For products without the power-down function, in addition, even if the charger is not connected, the S-8241 turns the discharging control FET on and changes to the normal condition from the overdischarge condition provided that the load is disconnected and that the potential difference between VM and VSS drops below the overcurrent 1 detection voltage (VIOV1), since the VM pin is pulled down by the RVMS resistor between VM and VSS in the IC when the battery voltage reaches the overdischarge release voltage (VDU) or higher.

Rev.7.6_00

5. Charger Detection

If the VM pin voltage is lower than the charger detection voltage (VCHA) when a battery in overdischarge condition is connected to a charger, overdischarge hysteresis is released, and when the battery voltage becomes equal to or higher than the overdischarge detection voltage (VDL), the overdischarge condition is released (the discharging control FET is turned on). This action is called charger detection. (The charger detection reduces the time for charging in which charging current flows through the internal parasitic diode in the discharging control FET) .

If the VM pin voltage is not lower than the charger detection voltage (VCHA) when a battery in overdischarge condition is connected to a charger, the overdischarge condition is released (the discharging control FET is turned on) as usual, when the battery voltage reaches the overdischarge release voltage (VDU) or higher.

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Rev.7.6_00

6. Abnormal Charge Current Detection

If the VM pin voltage drops below the charger detection voltage (VCHA) during charging under the normal condition and it continues for the overcharge detection delay time (tCU) or longer, the S-8241 turns the charging control FET off and stops charging. This action is called abnormal charge current detection.

Abnormal charge current detection works when the discharging control FET is on (DO pin voltage is “H”) and the VM pin voltage drops below the charger detection voltage (VCHA). When an abnormal charge current flows into a battery in the overdischarge condition, the S-8241 consequently turns the charging control FET off and stops charging after the battery voltage becomes the overdischarge detection voltage or higher (DO pin voltage becomes “H”) and the overcharge detection delay time (tCU) elapses.

Abnormal charge current detection is released when the voltage difference between VM pin and VSS pin becomes lower than the charger detection voltage (VCHA) by separating the charger.

Since the 0 V battery charging function has higher priority than the abnormal charge current detection function, abnormal charge current may not be detected by the product with the 0 V battery charging function while the battery voltage is low.

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

7. Delay Circuits

The detection delay times are determined by dividing a clock of approximately 2 kHz by the counter. [Example] Overcharge detection delay time (= abnormal charge current detection delay time): 1.0 s

Overdischarge detection delay time: 125 ms Overcurrent 1 detection delay time: 8 ms Overcurrent 2 detection delay time: 2 ms

Caution 1. Counting for the overcurrent 2 detection delay time starts when the overcurrent 1 is detected. Having detected the overcurrent 1, if the overcurrent 2 is detected after the overcurrent 2 detection delay time, the S-8241 turns the discharging control FET off as shown in the Figure 6. In this case, the overcurrent 2 detection delay time may seem to be longer or overcurrent 1 detection delay time may seem to be shorter than expected.

VDD

DO pin

VSS

Time VDD VIOV2

VM pin

VIOV1 VSS

Time

Overcurrent 2 detection delaytime (tIOV2)

Figure 6

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

After having detected an overcurrent (overcurrent 1, overcurrent 2, short-circuiting), the state is held for the overdischarge detection delay time or longer without releasing the load, the condition changes to the power-down condition when the battery voltage drops below the overdischarge detection voltage. If the battery voltage drops below the overdischarge detection voltage due to overcurrent, the discharging control FET is turned off when the overcurrent is detected. If the battery voltage recovers slowly and if the battery voltage after the overdischarge detection delay time is equal to or lower than the overdischarge detection voltage, the S-8241 changes to the power-down condition.

After having detected an overcurrent (overcurrent 1, overcurrent 2, short-circuiting), the state is held for the overdischarge detection delay time or longer without releasing the load, the condition changes to the overdischarge condition when the battery voltage drops below the overdischarge detection voltage. If the battery voltage drops below the overdischarge detection voltage due to overcurrent, the discharging control FET is turned off when the overcurrent is detected. If the battery voltage recovers slowly and if the battery voltage after the overdischarge detection delay time is equal to or lower than the overdischarge detection voltage, the S-8241 changes to the overdischarge condition.

Rev.7.6_00

8. 0 V Battery Charging Function

This function enables the charging of a connected battery whose voltage is 0 V by self-discharge. When a charger having 0 V battery start charging charger voltage (V0CHA) or higher is connected between EB+ and EB- pins, the charging control FET gate is fixed to VDD potential. When the voltage between the gate and the source of the charging control FET becomes equal to or higher than the turn-on voltage by the charger voltage, the charging control FET is turned on to start charging. At this time, the discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging control FET. If the battery voltage becomes equal to or higher than the overdischarge release voltage (VDU), the normal condition returns.

Caution 1. Some battery providers do not recommend charging of completely discharged batteries. Please

refer to battery providers before the selection of 0 V battery charging function.

2. The 0 V battery charging function has higher priority than the abnormal charge current detection function. Consequently, a product with the 0 V battery charging function charges a battery and abnormal charge current cannot be detected during the battery voltage is low (at most 1.8 V or lower). 3. When a battery is connected to the IC for the first time, the IC may not enter the normal condition in which discharging is possible. In this case, set the VM pin voltage equal to the VSS voltage (short the VM and VSS pins or connect a charger) to enter the normal condition.

9. 0 V Battery Charge Inhibiting Function

This function forbids the charging of a connected battery which is short-circuited internally (0 V battery). When the battery voltage becomes 0.9 V (typ.) or lower, the charging control FET gate is fixed to EB- potential to forbid charging. Charging can be performed, when the battery voltage is the 0 V battery charge inhibiting voltage (V0INH) or higher.

Caution 1. Some battery providers do not recommend charging of completely discharged batteries. Please

refer to battery providers before the selection of 0 V battery charging function.

2. When a battery is connected to the IC for the first time, the IC may not enter the normal condition in which discharging is possible. In this case, set the VM pin voltage equal to the VSS voltage (short the VM and VSS pins or connect a charger) to enter the normal condition.

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Rev.7.6_00

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

󰂄 Timing Chart

(1) Overcharge and overdischarge detection (for products with power-down function)

VCU VCL

Battery voltage

VDU VDL

VDD

DO pin

VSS

VDD

CO pin

VSS

VDD

VM pin V

VIOV1

VSS CHA

Charger connected Load

connected

Overcharge detection delay time (tCU) Overdischargedetectiondelay time (tDL)Mode

(1) (2) (1) (3) (1) Note: (1) Normal mode, (2) Overcharge mode, (3) Overdischarge mode, (4) Overcurrent mode The charger is assumed to charge with a constant current.

Figure 7

(2) Overcharge and overdischarge detection (for products without power-down function)

VCU VCL

Battery voltage

VDU VDL

DO pin

VDD CO pin

VSS

VDD

VM pin

VVIOV1

VSS CHA

Charger connected Load

connected

Overcharge detection delay time (tCU) Overdischarge detection delay time (tDL)Overdischarge detection delay time (tDL) Mode

(1) (2) (1)(3) (1)(3) (1)

Note: (1) Normal mode, (2) Overcharge mode, (3) Overdischarge mode, (4) Overcurrent mode The charger is assumed to charge with a constant current.

Figure 8

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

(3) Overcurrent detection

VC U VC L VD U VD L VD D Rev.7.6_00

Battery

voltage

DO pin VS S CO pin VD D VS S VD D VS HORT VI OV2 VI OV1 VS S VM pin Charger connection Load connection (1)(4) (1)(4) (1)(4) (1) Overcurrent 1 detection delay time (tIOV1) Overcurrent 2 detection delay time (tIOV2)Load short-circuiting detection delay time (t SHORT)Mode Note: (1) Normal mode, (2) Overcharge mode, (3) Overdischarge mode, (4) Overcurrent mode The charger is assumed to charge with constant current.

Figure 9

(4) Charger detection

VCUVCLVDUVDLVDDVSS

Batteryvoltage

DO pin

CO pin

VDDVSS

VM pin

VDDVSSVCHACharger connectionLoad connection

Overdischarge detection delay time (tDL)If VM pin voltage < VCHAOverdischarge is released atoverdischarge detection voltage (VDL)Mode

(1)(3)(1)Note: (1) Normal mode, (2) Overcharge mode, (3) Overdischarge mode, (4) Overcurrent mode

The charger is assumed to charge with constant current.

Figure 10

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Rev.7.6_00

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

(5) Abnormal charge current detection

VCUBatteryVCLvoltage

VDUVDLDO pin

VDDVSS

CO pin

VDDVSSVM pin

VDDVSSVCHACharger connectionLoad connectionAbnormal charging current detection delay timeOverdischarge detection delay time (tDL)( = Overcharge detection delay time (tCU))Mode

(1)(3)(1)(2)(1)Note: (1) Normal mode, (2) Overcharge mode, (3) Overdischarge mode, (4) Overcurrent mode

The charger is assumed to charge with constant current.

Figure 11

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

Rev.7.6_00

󰂄 Battery Protection IC Connection Example

R1 : 470 Ω VDD Battery C1 : 0.1 μF EB+ S-8241 Series VSS DO CO VM R2 : 1 kΩ FET1 FET2 EB−

Figure 12

Table 15 Constants for External Components

Typ. min. max. Remarks 0.4 V ≤ Threshold voltage ≤ Nch overdischarge detection voltage. *1 FET1 Discharge control ⎯ ⎯ ⎯ MOS_FET Withstand voltage between gate and *2source ≥ Charger voltage 0.4 V ≤ Threshold voltage ≤ Nch overdischarge detection voltage. *1 FET2 Charge control ⎯ ⎯ ⎯ MOS_FET Withstand voltage between gate and *2source ≥ Charger voltage Protection for ESD and Relation R1 ≤ R2 should be R1 Resistor 470 Ω 300 Ω R2 valuepower fluctuation maintained.*3 Protection for power Install a capacitor of 0.01 μF or C1 Capacitor 0.1 μF 0.01 μF 1.0 μF fluctuation higher between VDD and VSS. *4 To suppress current flow caused by reverse connection of a charger, set the Protection for chargerR2 Resistor 1 kΩ 300 Ω 1.3 kΩ reverse connection resistance within the range from 300 Ω to *51.3 kΩ. *1. If an FET with a threshold voltage of 0.4 V or lower is used, the FET may fail to cut the charging current. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may stop before overdischarge is detected. *2. If the withstand voltage between the gate and source is lower than the charger voltage, the FET may break. *3. If R1 has a higher resistance than R2 and if a charger is connected reversely, current flows from the charger to the IC and the voltage between VDD and VSS may exceed the absolute maximum rating. Install a resistor of 300 Ω or higher as R1 for ESD protection. If R1 has a high resistance, the overcharge detection voltage increases by IC current consumption. *4. If a capacitor C1 is less than 0.01 μF, DO may oscillate when load short-circuiting is detected, a charger is connected reversely, or overcurrent 1 or 2 is detected. A capacitor of 0.01 μF or higher as C1 should be installed. In some types of batteries DO oscillation may not stop unless the C1 capacity is increased. Set the C1 capacity by evaluating the actual application. *5. If R2 is set to less than 300 Ω, a current which is bigger than the power dissipation flows through the IC and the IC may break when a charger is connected reversely. If a resistor bigger than 1.3 kΩ is installed as R2, the charging current may not be cut when a high-voltage charger is connected. Caution 1. The above constants may be changed without notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constant do not guarantee proper operation. Perform thorough evaluation using the actual application to set the constant. Symbol Parts Purpose 26 Seiko Instruments Inc.

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Rev.7.6_00

BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

󰂄 Precautions

• Pay attention to the operating conditions for input/output voltage and load current so that the power loss in the IC does not exceed the power dissipation of the package. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party.

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

Rev.7.6_00

󰂄 Characteristics (Typical Data)

1. Detection/release voltage temperature characteristics

4.33 4.31

Overcharge detection voltage vs. temperature

Overcharge release voltage vs. temperature

4.23 4.21

VCU (V) 4.27 4.25

4.23

-50 -25 0 25 50 75 100

VCL (V) Ta(°C)

4.29 4.19 4.17 4.15

4.13

-50 -25 0 25 50 75 100

Overdischarge detection voltage vs. temperature

Ta(°C)

Overdischarge release voltage vs. temperature

2.40 2.36

2.50 2.46

VDL (V) 2.32 2.28 2.24

2.20

-50 -25 0 25 50 75 100

VDU (V) Ta(°C)

2.42 2.38 2.34

2.30

-50 -25 0 25 50 75 100

Overcurrent 1 detection voltage vs. temperature

Ta(°C)

0.60 0.55

Overcurrent 2 detection voltage vs. temperature

0.110 0.105

VIOV1 (V) 0.100 0.095

0.090

-50 -25 0 25 50 75 100

VIOV2 (V) Ta(°C)

0.50 0.45

0.40

-50 -25 0 25 50 75 100

2. Current consumption temperature characteristics

6 5

Current consumption vs. Temperature in normal modeTa(°C)

0.10 0.08

Current consumption vs. Temperature in power-down modeIOPE (μA) IPDN (μA) -50 100-25 0 25 50 75

Ta(°C)

4 3 2 1 0

0.06 0.04 0.02 0.00

-50 -25 0 25 50 75 100

Ta(°C)

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Rev.7.6_00

3. Current consumption Power voltage characteristics (Ta = 25 °C) 20 Current consumption − power supply volatge dependency VM = VSS BATTERY PROTECTION IC FOR 1-CELL PACK

S-8241 Series

IOPE (μA) 15 10 5 0 0 2 4 6 8 10 4. Detection/release delay time temperature characteristics

2.0 1.5

Overcharge detection delay time vs. temperature

VDD(V)

1.0 0.8

Overcharge release delay time vs. temperature

tCL (ms) tCU (s) 1.0 0.5

0.6 0.4 0.2

0.0 0.0

-50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100

Ta(°C) Ta(°C)

Overdischarge release delay time vs. temperature

250 200

Overdischarge detection delay time vs. temperature

150 100 50

-50 -25 0 25 50 75

100

2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0

-50 -25 0 25 50 75 100

tDL (ms) tCU (s) Ta(°C) Ta(°C)

500 400 300 200 100 0 -50

Overcurrent 1 release delay time vs. temperature

Overcurrent 1 detection delay time vs. temperature

tIOV1 (ms) 12 8 4

-50 -25 0 25 50 75 100

tIOV1 (μs) Release -25 0 25 50 75 100

Ta(°C)

Seiko Instruments Inc.

Ta(°C)

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BATTERY PROTECTION IC FOR 1-CELL PACK S-8241 Series

Overcurrent 2 detection delay time vs. temperature

Rev.7.6_00

Load short-circuiting delay time vs. temperature

50 40 30 20 10

2 1 0

-50 -25 0 25 50 75 100

tSHORT (μs) Ta(°C)

tIOV2 (ms) 3

-50 -25 0 25 50 75 100

5. Delay time power-voltage characteristics (Ta = 25 °C)

Ta(°C)

Overcurrent 2 detection delay time vs. power supply voltage dependency

16 Overcurrent 1 detection delay time vs. power supply voltage dependency 4 tIOV1 (ms) 12 8 4 0 tIOV2 (ms) VDD(V) 3 2 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDD(V) 6. CO pin/DO pin output current characteristics (Ta = 25 °C) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 CO pin source current characteristics VDD = 3.5 V, VSS = VM = 0 V 12 10 CO pin sink current characteristics VDD = 4.5 V, VSS = VM = 0 V ICO (mA) ICO (μA) 8 6 4 2 0 0 1 2 3 4 0 1 2 3 4 5 VCO(V) -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 DO pin source current characteristics VDD = 3.5 V, VSS = VM = 0 V VCO(V) 2.5 2.0 DO pin sink current characteristics VDD = 1.8 V, VSS = VM = 0 V IDO (mA) IDO (mA) 1.5 1.0 0.5 0.0 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 VDO(V) VDO(V) 30 Seiko Instruments Inc.

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2.9±0.21.9±0.2541230.16 -0.06 +0.10.95±0.10.4±0.1No. MP005-A-P-SD-1.2TITLENo.SCALEUNITSOT235-A-PKG DimensionsMP005-A-P-SD-1.2mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

4.0±0.1(10 pitches:40.0±0.2)+0.1ø1.5-02.0±0.050.25±0.1ø1.0-0+0.24.0±0.11.4±0.23.2±0.232145Feed directionNo. MP005-A-C-SD-2.1TITLENo.SCALEUNITSOT235-A-Carrier TapeMP005-A-C-SD-2.1mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

12.5max.Enlarged drawing in the central partø13±0.29.0±0.3(60°)(60°)No. MP005-A-R-SD-1.1TITLENo.SCALEUNITmmSOT235-A-ReelMP005-A-R-SD-1.1QTY.3,000Seiko Instruments Inc.元器件交易网www.cecb2b.com

1.57±0.03654123+0.050.08-0.020.48±0.020.50.2±0.05No. PG006-A-P-SD-2.0TITLENo.SCALEUNITSNT-6A-A-PKG DimensionsPG006-A-P-SD-2.0mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

ø1.5 -0+0.12.0±0.054.0±0.10.25±0.051.85±0.055°ø0.5 -0+0.14.0±0.10.65±0.05321456Feed directionNo. PG006-A-C-SD-1.0TITLENo.SCALEUNITSNT-6A-A-Carrier TapePG006-A-C-SD-1.0mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

12.5max.Enlarged drawing in the central partø13±0.29.0±0.3(60°)(60°)No. PG006-A-R-SD-1.0TITLENo.SCALEUNITmmSNT-6A-A-ReelPG006-A-R-SD-1.0QTY.5,000 Seiko Instruments Inc.元器件交易网www.cecb2b.com

0.521.360.520.30.20.30.20.3CautionMaking the wire pattern under the package is possible. However, note that the packagemay be upraised due to the thickness made by the silkscreen printing and of a solderresist on the pattern because this package does not have the standoff.No. PG006-A-L-SD-3.0TITLENo.SCALEUNITSNT-6A-A-Land RecommendationPG006-A-L-SD-3.0mmSeiko Instruments Inc.元器件交易网www.cecb2b.com

• The information described herein is subject to change without notice.• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described hereinwhose related industrial properties, patents, or other rights belong to third parties. The application circuitexamples explain typical applications of the products, and do not guarantee the success of any specificmass-production design.• When the products described herein are regulated products subject to the Wassenaar Arrangement or otheragreements, they may not be exported without authorization from the appropriate governmental authority.• Use of the information described herein for other purposes and/or reproduction or copying without theexpress permission of Seiko Instruments Inc. is strictly prohibited.• The products described herein cannot be used as part of any device or equipment affecting the humanbody, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatusinstalled in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, thefailure or malfunction of semiconductor products may occur. The user of these products should thereforegive thorough consideration to safety design, including redundancy, fire-prevention measures, andmalfunction prevention, to prevent any accidents, fires, or community damage that may ensue.

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