专利名称：SOLAR CELL AND SOLAR CELL
MANUFACTURING METHOD
发明人：WATABE, Takenori,OTSUKA, Hiroyuki申请号：EP15838584申请日：20150612公开号：EP3190628A4公开日：20180822
摘要：The present invention is a solar cell comprising a gallium-doped siliconsubstrate having a p-n junction formed therein, wherein the silicon substrate is providedwith a silicon thermal oxide film at least on the first main surface of main surfaces of thesilicon substrate, the first main surface being a main surface having a p-type region, andthe silicon substrate is further doped with boron. This provides a solar cell that canpossess high conversion efficiency while suppressing the photo-degradation even thoughhaving a silicon thermal oxide film as a passivation film of the substrate surface, and amethod for manufacturing such a solar cell.
申请人：Shin-Etsu Chemical Co., Ltd.
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