ixfx32n80p

N-Channel Enhancement ModeAvalanche RatedFast Intrinsic Diode

IXFK 32N80PIXFX 32N80P

RDS(on) trr

VDSS ID25

= 800 V= 32 A≤ 270 mΩ≤ 250 ns

SymbolVDSSVDGRVGSSVGSMID25IDMIAREAREASdv/dtPDTJ

TJMTstgTL

TSOLDMd

Test ConditionsTJ= 25°C to 150°C

TJ= 25°C to 150°C; RGS = 1 MΩContinuousTransientTC= 25°C

TC= 25°C, pulse width limited by TJMTC= 25°CTC= 25°CTC= 25°C

IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,TJ≤ 150°C, RG = 4 ΩTC= 25°C

Maximum Ratings

800800±30±40327016502.010830

-55 ... +150

150

-55 ... +150

300260

VVVV

TO-264 (IXFK)

G

AAAmJJV/nsW°C°C°C °C°C

D

S

(TAB)

PLUS247 (IXFX)

(TAB)1.6 mm (0.062 in.) from case for 10 sPlastic body for 10 sMounting torque (TO-264)

G = GateS = SourceD = DrainTab = Drain 1.13/10Nm/lb.in.

106

gg

WeightTO-264 PLUS247

Features

l

SymbolTest Conditions(TJ = 25°C, unless otherwise specified)BVDSSVGS(th)IGSSIDSSRDS(on)

VGS= 0 V, ID = 250 µAVDS= VGS, ID = 8 mAVGS= ±30 VDC, VDS = 0VDS= VDSS VGS= 0 V

TJ = 125°C

Characteristic Values Min. Typ.Max.8003.0

5.0±20025

1000270

VVnAµAµAmΩ

ll

l

International standard packagesFast recovery diode

Unclamped Inductive Switching (UIS)rated

Low package inductance-easy to drive and to protect

Advantages

lll

VGS= 10 V, ID = 0.5 ID25Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Easy to mount

Space savingsHigh power density

© 2006 IXYS All rights reservedDS99425E(01/06)

IXFK 32N80PIXFX 32N80PSymbol

Test Conditions

Characteristic Values

(TJ = 25°C unless otherwise specified)

Min.Typ.Max.23388800VGS = 0 V, VDS = 25 V, f = 1 MHz7002630VGS= 10 V, VDS = 0.5 VDSS, ID =0.5 ID25RG= 2 Ω (External)248524150VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID254044SpFpFpFnsnsnsnsnCnCnC0.15°C/W0.15°C/WTerminals:1 - Gate2 - Drain (Collector)3 - Source (Emitter)4 - Drain (Collector) PLUS 247TM OutlinegfsCissCossCrsstd(on)trtd(off)tfQg(on)QgsQgdRthJCRthCSVDS= 20 V; ID = 0.5 ID25, pulse testDim.AA1A2bb1b2CDEeLL1QRSource-Drain DiodeSymbolISISMVSDtrrQRM IRMTest ConditionsVGS = 0 VRepetitiveCharacteristic Values

(TJ = 25°C unless otherwise specified)Min.Typ.Max.32701.52500.86.0AAVnsµCAMillimeterMin.Max.4.835.212.292.541.912.161.141.401.912.132.923.120.610.8020.8021.3415.7516.135.45 BSC19.8120.323.814.325.596.204.324.83InchesMin.Max..190.205.090.100.075.085.045.055.075.084.115.123.024.031.819.840.620.635.215 BSC.780.800.150.170.2200.244.170.190 TO-264 OutlineIF = IS, VGS = 0 V,Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %IF = 25A, -di/dt = 100 A/µsVR = 100V, VGS = 0 VDim.AA1A2bb1b2cDEeJKLL1PQQ1RR1STMillimeterMin.Max.4.825.132.542.892.002.101.121.422.392.692.903.090.530.8325.9126.1619.8119.965.46 BSC0.000.250.000.2520.3220.832.292.593.173.666.076.278.388.693.814.321.782.296.046.301.571.83InchesMin.Max..190.202.100.114.079.083.044.056.094.106.114.122.021.0331.0201.030.780.786.215 BSC.000.010.000.010.800.820.090.102.125.144.239.247.330.342.150.170.070.090.238.248.062.072 IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by4,835,592

one or moreof the following U.S. patents:4,850,072

4,881,106

4,931,8445,017,5085,034,796

5,049,9615,063,3075,187,117

5,237,4815,381,0255,486,715

6,162,6656,259,123 B16,306,728 B1

6,404,065 B16,534,3436,583,505

6,683,3446,710,405B26,710,463

6,727,5856,759,6926,771,478 B2

IXFK 32N80P IXFX 32N80PFig. 1. Output Characteristics @ 25ºC35VGS = 10V3025 7V605070VGS = 10V 7V6VFig. 2. Extended Output Characteristics @ 25ºCI D - Amperes201510500123456789105VI D - Amperes6V4030201000510152025305VVD S - VoltsFig. 3. Output Characteristics @ 125ºC35VGS = 10V3025 7V 6V3.12.8VGS = 10VVD S - VoltsFig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction TemperatureR D S ( o n ) - Normalized2.52.21.91.61.31.00.70.4ID = 16AID = 32AI D - Amperes2015105V5003691215182124-50-250255075100125150VD S - VoltsFig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID2.82.6VGS = 10VTJ = 125ºC353025TJ - Degrees CentigradeFig. 6. Drain Current vs. CaseTemperatureR D S ( o n ) - Normalized2.42.22.01.81.61.41.21.00.8010203040506070TJ = 25ºC50-50-250255075100125150I D - AmperesI D - Amperes201510TC - Degrees Centigrade© 2006 IXYS All rights reserved

IXFK 32N80PIXFX 32N80PFig. 7. Input Admittance45403570605040302010033.544.55051015202530354045TJ = -40ºC 25ºC 125ºCFig. 8. Transconductance 2520151050 TJ = 125ºC 25ºC -40ºCVG S - VoltsFig. 9. Source Current vs. Source-To-Drain Voltage100908010987VDS = 400VID = 16AIG = 10mAg f s - SiemensI D - Amperes30I D - AmperesFig. 10. Gate ChargeI S - Amperes7060504030201000.30.40.50.60.70.80.911.11.2TJ = 125ºCTJ = 25ºCVG S - Volts6543210020406080100120140160VS D - VoltsFig. 11. Capacitance100000f = 1MHz1.00Q G - nanoCoulombsFig. 12. Maximum Transient Thermal ResistanceCapacitance - picoFaradsCiss100001000CossR ( t h ) J C - ºC / W3035400.10100Crs1005101520250.011101001000VD S - Volts IXYS reserves the right to change limits, test conditions, and dimensions.

Pulse Width - milliseconds